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MAC12HCD_05

更新时间： 2024-10-28 03:50:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 61K
描述
Triacs Silicon Bidirectional Thyristors

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MAC12HCD_05 数据手册

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MAC12HCD, MAC12HCM,  
MAC12HCN  
Preferred Device  
Triacs  
Silicon Bidirectional Thyristors  
Designed primarily for full-wave ac control applications, such as  
motor controls, heating controls or dimmers; or wherever full−wave,  
silicon gate−controlled devices are needed.  
http://onsemi.com  
TRIACS  
12 AMPERES RMS  
400 thru 800 VOLTS  
Features  
• Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3  
• High Commutating di/dt and High Immunity to dv/dt @ 125°C  
• Minimizes Snubber Networks for Protection  
MT2  
MT1  
• Blocking Voltage to 800 Volts  
G
• On-State Current Rating of 12 Amperes RMS at 80°C  
• High Surge Current Capability − 100 Amperes  
• Industry Standard TO-220AB Package for Ease of Design  
• Glass Passivated Junctions for Reliability and Uniformity  
• Pb−Free Packages are Available*  
MARKING  
DIAGRAM  
MAC12HCxG  
AYWW  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off-State Voltage (Note 1)  
V
V
V
TO−220AB  
CASE 221A−09  
STYLE 4  
DRM,  
RRM  
1
(T = −40 to 125°C, Sine Wave,  
J
2
50 to 60 Hz, Gate Open)  
MAC12HCD  
3
400  
600  
800  
MAC12HCM  
MAC12HCN  
x
A
Y
= D, M, or N  
= Assembly Location  
= Year  
On-State RMS Current  
I
12  
A
A
T(RMS)  
(All Conduction Angles; T = 80°C)  
WW = Work Week  
C
G
= Pb−Free Package  
Peak Non-Repetitive Surge Current  
I
100  
TSM  
(One Full Cycle, 60 Hz, T = 125°C)  
J
PIN ASSIGNMENT  
2
2
Circuit Fusing Consideration (t = 8.33 ms)  
I t  
41  
16  
A sec  
1
Main Terminal 1  
Peak Gate Power  
P
W
W
GM  
(Pulse Width ≤ 1.0 ms, T = 80°C)  
2
3
4
Main Terminal 2  
Gate  
C
Average Gate Power  
P
0.35  
G(AV)  
(t = 8.3 ms, T = 80°C)  
C
Main Terminal 2  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +125  
−40 to +150  
°C  
°C  
J
T
stg  
ORDERING INFORMATION  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Device  
Package  
Shipping  
MAC12HCD  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC12HCDG  
TO−220AB  
(Pb−Free)  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
MAC12HCM  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC12HCMG  
TO−220AB  
(Pb−Free)  
MAC12HCN  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC12HCNG  
TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 3  
MAC12HC/D  
123456

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