MAC12D-BD

更新时间： 2024-10-28 13:10:15

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摩托罗拉 - MOTOROLA		可控硅三端双向交流开关
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MAC12D-BD 数据手册

SEMICONDUCTOR TECHNICAL DATA

*Motorola preferred devices

TRIACS

12 AMPERES RMS

400 thru 800

VOLTS

Silicon Bidirectional Thyristors

Designed for high performance full–wave ac control applications where high

noise immunity and commutating di/dt are required.

•

Blocking Voltage to 800 Volts

On-State Current Rating of 12 Amperes RMS at 70°C

Uniform Gate Trigger currents in Three Modes

High Immunity to dv/dt — 250 V/µs minimum at 125°C

High Commutating di/dt — 6.5 A/ms minimum at 125°C

Industry Standard TO–220 AB Package

MT2

High Surge Current Capability — 120 Amperes

MT1

MT2

CASE 221A–06

(TO-220AB)

Style 4

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Peak Repetitive Off-State Voltage (1)

(T = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)

DRM

Volts

MAC12D

MAC12M

MAC12N

400

600

800

On-State RMS Current

T(RMS)

(Full Cycle Sine Wave, 60 Hz, T = 70°C)

Peak Non-repetitive Surge Current

(One Full Cycle, 60 Hz, T = 125°C)

100

TSM

Circuit Fusing Consideration (t = 8.3 ms)

I t

A sec

Peak Gate Power (Pulse Width ≤ 1.0 µs, T = 80°C)

Watts

°C

Average Gate Power (t = 8.3 ms, T = 80°C)

0.35

G(AV)

Operating Junction Temperature Range

Storage Temperature Range

–40 to +125

–40 to +150

°C

stg

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

2.2

62.5

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

260

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, Gate Open)

= 25°C

=1 25°C

—

0.01

2.0

DRM

(1)

DRM

andV

foralltypescanbeappliedonacontinuousbasis. Ratingsapplyforzeroornegativegatevoltage;positivegatevoltageshall

RRM

notbeappliedconcurrentwithnegativepotentialontheanode. Blockingvoltagesshallnotbetestedwithaconstantcurrentsourcesuchthatthe

voltage ratings of the devices are exceeded.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

3–53

Motorola Thyristor Device Data

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与MAC12D-BD相关器件

型号	品牌	获取价格	描述	数据表
MAC12D-BG	MOTOROLA	获取价格	400V, 12A, TRIAC, TO-220AB
MAC12D-BL	MOTOROLA	获取价格	TRIAC, 400V V(DRM), 12A I(T)RMS, TO-220AB,
MAC12D-BS	MOTOROLA	获取价格	400V, 12A, TRIAC, TO-220, 2 PIN
MAC12D-BU	MOTOROLA	获取价格	TRIAC, 400V V(DRM), 12A I(T)RMS, TO-220, 2 PIN
MAC12D-BV	MOTOROLA	获取价格	400V, 12A, TRIAC, TO-220AB, TO-220, 3 PIN
MAC12D-DW	MOTOROLA	获取价格	400V, 12A, TRIAC, TO-220AB
MAC12DG	ONSEMI	获取价格	Triacs Silicon Bidirectional Thyristors
MAC12DG	LITTELFUSE	获取价格	TRIAC, 400V V(DRM), 12A I(T)RMS, TO-220AB, CASE 221A-09, 3 PIN
MAC-12G	MINI	获取价格	Frequency Mixers
MAC-12G+	MINI	获取价格	Frequency Mixers

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