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MAC12HCD PDF预览

MAC12HCD

更新时间: 2024-10-27 22:11:51
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置三端双向交流开关局域网
页数 文件大小 规格书
8页 76K
描述
Triacs Silicon Bidirectional Thyristors

MAC12HCD 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.76
Is Samacsys:N外壳连接:MAIN TERMINAL 2
配置:SINGLE换向电压的临界上升率-最小值:15 V/us
关态电压最小值的临界上升速率:600 V/us最大直流栅极触发电流:50 mA
最大直流栅极触发电压:1.5 V最大维持电流:60 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0最大漏电流:0.01 mA
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):240
认证状态:Not Qualified最大均方根通态电流:12 A
断态重复峰值电压:400 V子类别:TRIACs
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30触发设备类型:TRIAC
Base Number Matches:1

MAC12HCD 数据手册

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MAC12HCD, MAC12HCM,  
MAC12HCN  
Preferred Device  
Triacs  
Silicon Bidirectional Thyristors  
Designed primarily for full-wave ac control applications, such as  
motor controls, heating controls or dimmers; or wherever full–wave,  
silicon gate–controlled devices are needed.  
http://onsemi.com  
Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3  
High Commutating di/dt and High Immunity to dv/dt @ 125°C  
Minimizes Snubber Networks for Protection  
TRIACS  
12 AMPERES RMS  
400 thru 800 VOLTS  
Blocking Voltage to 800 Volts  
On-State Current Rating of 12 Amperes RMS at 80°C  
High Surge Current Capability – 100 Amperes  
Industry Standard TO-220AB Package for Ease of Design  
Glass Passivated Junctions for Reliability and Uniformity  
Device Marking: Logo, Device Type, e.g., MAC12HCD, Date Code  
MT2  
MT1  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
4
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off-State Voltage  
V
DRM,  
Volts  
(T = –40 to 125°C, Sine Wave,  
J
V
RRM  
50 to 60 Hz, Gate Open)  
MAC12HCD  
MAC12HCM  
MAC12HCN  
400  
600  
800  
1
2
3
On-State RMS Current  
(All Conduction Angles; T = 80°C)  
I
12  
100  
41  
A
A
T(RMS)  
TO–220AB  
CASE 221A  
STYLE 4  
C
Peak Non-Repetitive Surge Current  
(One Full Cycle, 60 Hz, T = 125°C)  
I
TSM  
J
2
2
PIN ASSIGNMENT  
Circuit Fusing Consideration  
(t = 8.33 ms)  
I t  
A sec  
1
2
3
4
Main Terminal 1  
Peak Gate Power  
(Pulse Width 1.0 µs, T = 80°C)  
P
GM  
16  
Watts  
Watts  
°C  
Main Terminal 2  
Gate  
C
Average Gate Power  
P
0.35  
G(AV)  
Main Terminal 2  
(t = 8.3 ms, T = 80°C)  
C
Operating Junction Temperature Range  
T
J
–40 to  
+125  
ORDERING INFORMATION  
Storage Temperature Range  
T
–40 to  
+150  
°C  
stg  
Device  
Package  
TO220AB  
TO220AB  
TO220AB  
Shipping  
MAC12HCD  
MAC12HCM  
MAC12HCN  
50 Units/Rail  
50 Units/Rail  
50 Units/Rail  
(1) V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
November, 2001 – Rev. 2  
MAC12HC/D  

MAC12HCD 替代型号

型号 品牌 替代类型 描述 数据表
MAC12HCDG ONSEMI

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TRIACS 12 AMPERES RMS 400 thru 800 VOLTS