5秒后页面跳转
捷配首页

Datasheet > 触发装置 > TRIAC> MAC12HCDG
MAC12HCDG PDF预览

MAC12HCDG

更新时间： 2024-10-28 03:50:31
品牌 Logo 应用领域
安森美 - ONSEMI 触发装置三端双向交流开关局域网
页数 文件大小 规格书
6页 61K
描述
Triacs Silicon Bidirectional Thyristors

阅读下载

中文翻译

获取价格

MAC12HCDG 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Transferred零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.30.00.80Factory Lead Time：1 week
风险等级：5.22Is Samacsys：N
外壳连接：MAIN TERMINAL 2配置：SINGLE
换向电压的临界上升率-最小值：15 V/us关态电压最小值的临界上升速率：600 V/us
最大直流栅极触发电流：50 mA最大直流栅极触发电压：1.5 V
最大维持电流：60 mAJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
最大漏电流：0.01 mA元件数量：1
端子数量：3最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大均方根通态电流：12 A断态重复峰值电压：400 V
子类别：TRIACs表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
触发设备类型：TRIACBase Number Matches：1

MAC12HCDG 数据手册

 浏览型号MAC12HCDG的Datasheet PDF文件第2页浏览型号MAC12HCDG的Datasheet PDF文件第3页浏览型号MAC12HCDG的Datasheet PDF文件第4页浏览型号MAC12HCDG的Datasheet PDF文件第5页浏览型号MAC12HCDG的Datasheet PDF文件第6页 
MAC12HCD, MAC12HCM,  
MAC12HCN  
Preferred Device  
Triacs  
Silicon Bidirectional Thyristors  
Designed primarily for full-wave ac control applications, such as  
motor controls, heating controls or dimmers; or wherever full−wave,  
silicon gate−controlled devices are needed.  
http://onsemi.com  
TRIACS  
12 AMPERES RMS  
400 thru 800 VOLTS  
Features  
• Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3  
• High Commutating di/dt and High Immunity to dv/dt @ 125°C  
• Minimizes Snubber Networks for Protection  
MT2  
MT1  
• Blocking Voltage to 800 Volts  
G
• On-State Current Rating of 12 Amperes RMS at 80°C  
• High Surge Current Capability − 100 Amperes  
• Industry Standard TO-220AB Package for Ease of Design  
• Glass Passivated Junctions for Reliability and Uniformity  
• Pb−Free Packages are Available*  
MARKING  
DIAGRAM  
MAC12HCxG  
AYWW  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off-State Voltage (Note 1)  
V
V
V
TO−220AB  
CASE 221A−09  
STYLE 4  
DRM,  
RRM  
1
(T = −40 to 125°C, Sine Wave,  
J
2
50 to 60 Hz, Gate Open)  
MAC12HCD  
3
400  
600  
800  
MAC12HCM  
MAC12HCN  
x
A
Y
= D, M, or N  
= Assembly Location  
= Year  
On-State RMS Current  
I
12  
A
A
T(RMS)  
(All Conduction Angles; T = 80°C)  
WW = Work Week  
C
G
= Pb−Free Package  
Peak Non-Repetitive Surge Current  
I
100  
TSM  
(One Full Cycle, 60 Hz, T = 125°C)  
J
PIN ASSIGNMENT  
2
2
Circuit Fusing Consideration (t = 8.33 ms)  
I t  
41  
16  
A sec  
1
Main Terminal 1  
Peak Gate Power  
P
W
W
GM  
(Pulse Width ≤ 1.0 ms, T = 80°C)  
2
3
4
Main Terminal 2  
Gate  
C
Average Gate Power  
P
0.35  
G(AV)  
(t = 8.3 ms, T = 80°C)  
C
Main Terminal 2  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +125  
−40 to +150  
°C  
°C  
J
T
stg  
ORDERING INFORMATION  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Device  
Package  
Shipping  
MAC12HCD  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC12HCDG  
TO−220AB  
(Pb−Free)  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
MAC12HCM  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC12HCMG  
TO−220AB  
(Pb−Free)  
MAC12HCN  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC12HCNG  
TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 3  
MAC12HC/D  
123456

中文翻译

下载PDF

MAC12HCDG 替代型号

型号 品牌 替代类型 描述 数据表
MAC12HCD ONSEMI

功能相似

 Triacs Silicon Bidirectional Thyristors

与MAC12HCDG相关器件

型号 品牌 获取价格 描述 数据表
MAC12HCM ONSEMI

获取价格

 		Triacs Silicon Bidirectional Thyristors
MAC12HCMG ONSEMI

获取价格

 		Triacs Silicon Bidirectional Thyristors
MAC12HCMG LITTELFUSE

获取价格

 		该三端双向可控硅主要用于全波交流控制应用，例如电机控制、加热控制与调光器；或用于需要全波硅
MAC12HCN ONSEMI

获取价格

 		Triacs Silicon Bidirectional Thyristors
MAC12HCNG ONSEMI

获取价格

 		Triacs Silicon Bidirectional Thyristors
MAC12HCNG LITTELFUSE

获取价格

 		该三端双向可控硅主要用于全波交流控制应用，例如电机控制、加热控制与调光器；或用于需要全波硅
MAC12M MOTOROLA

获取价格

 		TRIACS 12 AMPERES RMS 400 thru 800 VOLTS
MAC12M ONSEMI

获取价格

 		Triacs Silicon Bidirectional Thyristors
MAC12M-AF MOTOROLA

获取价格

 		TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220AB,
MAC12M-AJ MOTOROLA

获取价格

 		TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220AB,

与MAC12HCDG相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证