MAAP-015016-DIE
Ka-Band 4 W Power Amplifier
32 - 38 GHz
Rev. V2
Features
Functional Diagram
Frequency Range: 32 to 38 GHz
Small Signal Gain: 18 dB
Saturated Power: 37 dBm
Power Added Efficiency: 23%
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method
2010
Bias VD = 6 V, ID = 2.5 A, VG = -0.9 V
Dimensions: 3.09 x 5.67 x 0.05 mm
Description
The MAAP-015016-DIE is
a wideband power
amplifier operating from 32 to 38 GHz, with a
saturated output power of 37 dBm, 23% PAE and
small signal gain of 18 dB.
The design is fully matched to 50 Ohms and
includes on-chip ESD protection and integrated DC
blocking caps on both I/O ports. The device is
manufactured in 0.15 µm GaAs pHEMT device
technology with BCB wafer coating to enhance
ruggedness and repeatability of performance.
Pad Configuration2
Pad #
1
Function
RFIN
Description
Input, matched to 50 Ω
Gate Voltage Stage 1 - 3
Drain Voltage Stage 1
Drain Voltage Stage 2
Drain Voltage Stage 3
Gate Voltage Stage 4
Drain Voltage Stage 4
Output, matched to 50 Ω
The part is well suited for Radar and
Communications applications.
2,14
3,13
4,12
5,11
6,10
7,9
VG1,2,3
VD1
VD2
Ordering Information1
VD3
Part Number
MAAP-015016-DIE
MAAP-015016-DIEEV1
1. Die quantity varies.
Package
VG4
Die in Gel Pack1
Evaluation Module
VD4
8
RFOUT
2. Backside metal is RF, DC and thermal ground.
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
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DC-0005369