MAAP-015024
Power Amplifier, 8 W
14.5 - 17.5 GHz
Rev. V5
Features
Functional Schematic
8 W Power Amplifier
20 dB Small Signal Gain
VG1 VD1
VG2
VD2 VG3
VD3
13
3
6
9
11
1
39 dBm Saturated Pulsed Output Power
Dual Sided Bias Architecture
100% On-wafer DC & RF Power Tested
100% Visual Inspection to MIL-STD-833
Bare Die
14 RFOUT
28
RFIN
Description
The MAAP-015024 three stage 14.5 - 17.5 GHz
GaAs MMIC power amplifier has a saturated pulsed
output power of 39 dBm and a small signal gain of
20 dB. The power amplifier must be biased directly
on both sides of the die.
15
25
19
17
27
22
This MMIC uses MACOM’s GaAs pHEMT device
technology and is based upon optical gate
lithography to ensure high repeatability and
uniformity. The chip has surface passivation for
protection and backside via holes and gold
metallization to allow a conductive epoxy die attach
process.
VG1 VD1
VG2
VD2 VG3
VD3
Pad Configuration
Pad No.
Function
Description
1
VG1
VD1
VG2
VD2
VG3
VD3
RFOUT
VD3
VG3
VD2
VG2
VD1
VG1
RFIN
1st Stage Gate Voltage
1st Stage Drain Voltage
2nd Stage Gate Voltage
2nd Stage Drain Voltage
3rd Stage Gate Voltage
3rd Stage Drain Voltage
RF Output
This device is well suited for communication and
radar applications.
3
6
9
11
13
14
15
17
19
22
25
27
28
Ordering Information
Part Number
Package
Die in vacuum release gel
pack
MAAP-015024-DIE
3rd Stage Drain Voltage
3rd Stage Gate Voltage
2nd Stage Drain Voltage
2nd Stage Gate Voltage
1ST Stage Drain Voltage
1st Stage Gate Voltage
RF Input
MAAP-015024-DIER
MAAP-015024-DIEEV1
MAAP-015024-DIEEV2
Diced Wafer on Grip Ring
Direct gate bias sample
board
On chip gate bias sample
board
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
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