Datasheet > MAAP-015030-DIEEV2

MAAP-015030-DIEEV2

更新时间： 2024-11-22 01:09:55

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
12页	1189K
描述
Power Amplifier, 13 W

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MAAP-015030

Power Amplifier, 13 W

8.5 - 11.75 GHz

Rev. V4

Features

Functional Schematic



12 W X-Band Power Amplifier

21 dB Large Signal Gain

41 dBm Saturated Pulsed Output Power

40% Power Added Efficiency

On Chip Gate Bias Circuit

100% On-wafer DC & RF Power Tested

100% Visual Inspection to MIL-STD-833

Bare Die

V_B1 V_B2 V_G2

V_D1

V_D2

V_G1

RF_IN

V_G1

Bias

RF_OUT

Description

The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs

MMIC power amplifier has a saturated pulsed output

power of 41 dBm and a large signal gain of 21 dB.

The power amplifier can be biased using a direct

gate voltage or using an on chip gate bias circuit.

Bias

18 17

V_B1 V_B2 V_G2

V_D1

V_D2

This device is well suited for communication and

radar applications.

Pad Configuration

Pad No.

Function

Pad No.

Function

V_G1

GND

Bias Circuit GND

V_D2

No Connection

V_D1

Ordering Information

V_B1

V_G2

Part Number

Package

V_B2

Bias Circuit GND

V_G2

Bias Circuit GND

Die in Vacuum release gel

pack

MAAP-015030-DIE

V_B2

Direct gate bias sample

board

MAAP-015030-DIEEV1

MAAP-015030-DIEEV2

V_B1

GND

On chip gate bias sample

board

V_D1

V_D2

Bias Circuit GND

V_G1

GND

RF_OUT

RF_IN

* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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