Datasheet > MAAPGM0027-DIE

MAAPGM0027-DIE

更新时间： 2024-11-25 04:17:07

品牌	Logo	应用领域
泰科 - TE		放大器功率放大器
页数	文件大小	规格书
6页	274K
描述
2.0-4.0 GHz 1W Power Amplifier

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MAAPGM0027-DIE 技术参数

生命周期：	Transferred	包装说明：	0.117 X 0.062 INCH, 0.003 INCH HEIGHT, DIE
Reach Compliance Code：	unknown	风险等级：	5.69
功能数量：	1	封装等效代码：	DIE OR CHIP
电源：	-2,8 V	子类别：	RF/Microwave Amplifiers
技术：	GAAS	Base Number Matches：	1

MAAPGM0027-DIE 数据手册

2.0-4.0 GHz 1W Power Amplifier

MAAPGM0027-DIE

RO-P-DS-3014 B

Preliminary Information

Features

♦ 1 Watt Saturated Output Power Level

♦ Variable Drain Voltage (4-10V) Operation

♦ MSAG™ MESFET Process

♦ Proven Manufacturability and Reliability

ꢀNo Airbridges

ꢀPolyimide Scratch Protection

ꢀNo Hydrogen Poisoning Susceptibility

Description

The MAAPGM0027-Die is a 2-stage power amplifier with on-chip bias

networks. This product is fully matched to 50 ohms on both the input

and output. It can be used as a power amplifier stage or as a driver

stage in high power applications.

Fabricated using M/A-COM’s repeatable, high performance and highly

reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each

device is 100% RF tested on wafer to ensure performance compliance.

Primary Applications

♦ Wireless Local Loop 3.4-3.6 GHz

♦ MMDS 2.5-2.7 GHz

♦ Radar

M/A-COM’s MSAG™ process features robust silicon-like manufactur-

ing processes, planar processing of ion implanted transistors, multiple

implant capability enabling power, low-noise, switch and digital FETs

on a single chip, and polyimide scratch protection for ease of use with

automated manufacturing processes. The use of refractory metals and

the absence of platinum in the gate metal formulation prevents hydro-

gen poisoning when employed in hermetic packaging.

Electrical Characteristics: T_B= 40°C¹, Z₀= 50 Ω, V_DD= 8V, I_DQ≈ 230mA², P_in= 10 dBm

Parameter

Bandwidth

Symbol

Typical

2.0-4.0

Units

GHz

dBm

Output Power

POUT

PAE

Power Added Efficiency

1-dB Compression Point

Small Signal Gain

Input VSWR

dBm

P1dB

VSWR

1.8:1

1.4:1

Output VSWR

Gate Supply Current

Drain Supply Current

< 2

< 350

I_GG

I_DD

Output Third Order Intercept

OTOI

IM3

dBm

3^rdOrder Intermodulation Distortion

Single Carrier Level = 21 dBm

-15

5^thOrder Intermodulation Distortion

Single Carrier Level = 21 dBm

IM5

-39

dBm

Noise Figure

2^ndHarmonic

-15

-25

dBc

3^rdHarmonic

1. T_B= MMIC Base Temperature

2. Adjust V_GGbetween –2.4 and –1.5V to achieve indicated I_DQ

M/A-COM Inc. and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

12 3 4 5 6

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与MAAPGM0027-DIE相关器件

型号	品牌	获取价格	描述	数据表
MAAPGM0028	TE	获取价格	2.0-6.5 GHz 0.5W Power Amplifier
MAAPGM0029	TE	获取价格	3.6-6.5 GHz 1W Power Amplifier
MAAPGM0029-DIE	TE	获取价格	Amplifier, Power, 1W 3.5-6.5 GHz
MAAPGM0030	TE	获取价格	Amplifier, Power, 1W 5.0-9.0 GHz
MAAPGM0030-DIE	TE	获取价格	5.0-9.0 GHz 1W Power Amplifier
MAAPGM0034	TE	获取价格	0.5W X/Ku-Band Power Amplifier 8.0-12.0 GHz
MAAPGM0034-DIE	TE	获取价格	0.5W X/Ku-Band Power Amplifier 8.0-12.5 GHz
MAAPGM0035	TE	获取价格	1.6W S/C-Band Power Amplifier 2.5-5.5 GHz
MAAPGM0035S	TE	获取价格	2.5-5.5 GHz 1.6W Power Amplifier
MAAPGM0035S-DIE	TE	获取价格	Amplifier, Power, S/C-Band, 1.6W (2.5-5.5 GHz)

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