Datasheet > MAAPGM0036

MAAPGM0036

更新时间： 2024-11-24 21:54:03

品牌	Logo	应用领域
泰科 - TE		放大器功率放大器
页数	文件大小	规格书
6页	239K
描述
1.2-3.2 GHz 1.2W Power Amplifier

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中文翻译

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数据手册

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MAAPGM0036 数据手册

RO-P-DS-3075

Preliminary Information

1.2-3.2 GHz 1.2W Power Amplifier

Features

♦ 1.2 Watt Saturated Output Power Level

♦ Variable Drain Voltage (4-10V) Operation

♦ Self-Aligned MSAG^®Process

MAAPGM0036

APGM0036

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Primary Applications

♦ 2.5-2.7 GHz MMDS

♦ GPS

♦ Radar

♦ Telemetry

Description

The MAAPGM0036 is a packaged, 2-stage, 1.2 W power

amplifier with on-chip bias networks in a bolt down ceramic

package, allowing easy assembly. This product is fully

matched to 50 ohms on both the input and output. It can be

used as a power amplifier stage or as a driver stage in high

power applications.

Pin Number

RF Designator

No Connection

V_GG

RF IN

V_GG

No Connection

V_DD

Each device is 100% RF tested to ensure performance

compliance. The part is fabricated using M/A-COM’s GaAs

Multifunction Self-Aligned Gate (MSAG^®) MESFET Process.

M/A-COM’s MSAG process features robust silicon-like

manufacturing processes, planar processing of ion implanted

transistors and multiple implant capability enabling power,

low-noise, switch and digital FETs on a single chip. The use

of refractory metals and the absence of platinum in the gate

metal formulation prevents hydrogen poisoning when

employed in hermetic packaging.

RF OUT

V_DD

No Connection

Maximum Operating Conditions ¹

Parameter

Absolute Maximum

Units

Symbol

Input Power

23.0

+12.0

-3.0

dBm

P_IN

V_DD

V_GG

Drain Supply Voltage

Gate Supply Voltage

Quiescent Drain Current (No RF, 40% IDSS)

Quiescent DC Power Dissipated (No RF)

730

6.6

I_DQ

P_DISS

Junction Temperature

Storage Temperature

Processing Temperature

180

-55 to +150

230

°C

T_J

T_STG

1. Operation outside of these ranges may reduce product reliability.

12 3 4 5 6

中文翻译

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