Datasheet > MAAPGM0041-DIE

MAAPGM0041-DIE

更新时间： 2024-11-27 04:17:07

品牌	Logo	应用领域
泰科 - TE		放大器射频微波功率放大器
页数	文件大小	规格书
6页	257K
描述
1.3W X/Ku-Band Power Amplifier 11.0-15.0 GHz

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中文翻译

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技术参数
数据手册

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MAAPGM0041-DIE 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	Is Samacsys：	N
其他特性：	HIGH RELIABILITY	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	20 dB
最大输入功率 (CW)：	21 dBm	最大工作频率：	15000 MHz
最小工作频率：	11000 MHz	射频/微波设备类型：	WIDE BAND MEDIUM POWER
最大电压驻波比：	1.5	Base Number Matches：	1

MAAPGM0041-DIE 数据手册

RO-P-DS-3042- -

1.3W X/Ku-Band Power Amplifier

11.0-15.0 GHz

Preliminary Information

Features

11.0-15.0 GHz GaAs MMIC Amplifier

♦ 11.0-15.0 GHz Operation

♦ 1.3 Watt Saturated Output Power Level

♦ Variable Drain Voltage (4-10V) Operation

♦ Self-Aligned MSAG^®MESFET Process

Primary Applications

♦ Point-to-Point Radio

♦ SatCom

♦ Radio Location

Description

The MAAPGM0041-DIE is a 3-stage 1.3 W power amplifier with

on-chip bias networks. This product is fully matched to 50 ohms

on both the input and output. It can be used as a power amplifier

stage or as a driver stage in high power applications.

Each device is 100% RF tested on wafer to ensure performance

compliance. The part is fabricated using M/A-COM’s repeatable,

high performance and highly reliable GaAs Multifunction Self-

Aligned Gate (MSAG^®) MESFET Process. This process features

silicon oxynitride passivation and polyimide scratch protection.

Electrical Characteristics: T_B= 40°C¹, Z₀= 50 Ω, V_DD= 8V, V_GG= -2V, P_in= 16 dBm

Parameter

Symbol

Typical

Units

Bandwidth

Output Power

11.0-15.0

GHz

dBm

P_OUT

PAE

Power Added Efficiency

1-dB Compression Point

Small Signal Gain

Input VSWR

dBm

P1dB

VSWR

2:1

Output VSWR

1.5:1

< 2

Gate Current

I_GG

I_DD

Drain Current

< 600

Output Third Order Intercept

Noise Figure

OTOI

dBm

6.5

2^ndHarmonic

-30

dBc

3^rdHarmonic

-40

1. T_B= MMIC Base Temperature

12 3 4 5 6

中文翻译

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