Datasheet > MAAPGM0052-DIE

MAAPGM0052-DIE

更新时间： 2024-11-25 04:17:07

品牌	Logo	应用领域
泰科 - TE		放大器
页数	文件大小	规格书
6页	335K
描述
Amplifier, Distributed Power 4.0-18.0 GHz

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MAAPGM0052-DIE 技术参数

生命周期：	Transferred	包装说明：	0.118 X 0.118 INCH, 0.003 INCH HEIGHT, DIE
Reach Compliance Code：	unknown	风险等级：	5.72
Is Samacsys：	N	功能数量：	1
封装等效代码：	DIE OR CHIP	电源：	-1.8,8 V
子类别：	RF/Microwave Amplifiers	技术：	GAAS
Base Number Matches：	1

MAAPGM0052-DIE 数据手册

Amplifier, Distributed Power

4.0—18.0 GHz

MAAPGM0052-DIE

903210 —

Preliminary Information

Features

♦ 0.5 Watt Saturated Output Power Level

♦ Variable Drain Voltage (5-10V) Operation

♦ GaAs MSAG™ Process

♦ Proven Manufacturability and Reliability

ꢀNo Airbridges

ꢀPolyimide Scratch Protection

ꢀNo Hydrogen Poisoning Susceptibility

Description

The MAAPGM0052-Die is a 2-stage distributed power amplifier with

on-chip bias networks. This product is fully matched to 50 ohms on

both the input and output. It can be used as a power amplifier stage

or as a driver stage in high power applications.

Fabricated using M/A-COM’s repeatable, high performance and

highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)

Process, each device is 100% RF tested on wafer to ensure

performance compliance.

Primary Applications

M/A-COM’s MSAG™ process features robust silicon-like manufac-

turing processes, planar processing of ion implanted transistors,

multiple implant capability enabling power, low-noise, switch and

digital FETs on a single chip, and polyimide scratch protection for

ease of use with automated manufacturing processes. The use of

refractory metals and the absence of platinum in the gate metal

formulation prevents hydrogen poisoning when employed in her-

metic packaging.

Electrical Characteristics: T_B= 40°C¹, Z₀= 50Ω, V_DD= 8V, I_DQ≈ 500 mA², P_in= 17 dBm, Rg ≈ 100Ω

Parameter

Symbol

Typical

Units

Bandwidth

4.0-18.0

GHz

Output Power

1dB Compression Point

Small Signal Gain

Noise Figure

26.0

dBm

P_OUT

P1dB

6.0

Input VSWR

VSWR

I_GG

1.4:1

1.5:1

Output VSWR

Gate Supply Current

Drain Supply Current

I_DD

600

1. T_B= MMIC Base Temperature

2. Adjust V_GGbetween –2.4 and –1.0V to achieve I_DQindicated.

M/A-COM Inc. and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

12 3 4 5 6

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与MAAPGM0052-DIE相关器件

型号	品牌	获取价格	描述	数据表
MAAPGM0053-DIE	TE	获取价格	Amplifier, Distributed Power, 0.5 W 2.0-18.0 GHz
MAAPGM0057-DIE	TE	获取价格	2.0-13.0 GHz 1.2 W Power Amplifier
MAAPGM0060	TE	获取价格	4.8-6.7 GHz 5W Power Amplifier
MAAPGM0060-DIE	TE	获取价格	Amplifier, Power, 5W 4.8-6.7 GHz
MAAPGM0062-DIE	TE	获取价格	9.5-12.0 GHZ, 4W Power Amplifier
MAAPGM0063-DIE	TE	获取价格	8.5-11.0 GHZ, 5W Power Amplifier
MAAPGM0064	TE	获取价格	Amplifier, Power, 2.0 W 6.5-9.5 GHz
MAAPGM0064-DIE	TE	获取价格	Amplifier, Power, 2.0 W 6.5-9.5 GHz
MAAPGM0066-DIE	TE	获取价格	Amplifier, Power, 2 W 2.5-6.0 GHz
MAAPGM0067-DIE	TE	获取价格	Amplifier, Power, 2W

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