Datasheet > MAAPGM0074-DIE

MAAPGM0074-DIE

更新时间： 2024-11-25 02:51:11

品牌	Logo	应用领域
泰科 - TE		放大器
页数	文件大小	规格书
8页	426K
描述
Amplifier, Power, 8W 2.0-8.0 GHz

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技术参数
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MAAPGM0074-DIE 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	0.197 X 0.250 INCH, 0.003 INCH HEIGHT, HERMETIC SEALED, DIE	Reach Compliance Code：	unknown
风险等级：	5.8	Is Samacsys：	N
Base Number Matches：	1

MAAPGM0074-DIE 数据手册

MAAP-000074-PED000

Amplifier, Power, 8W

2.0-8.0 GHz

Rev —

Preliminary Datasheet

Features

♦ 8 Watt Saturated Output Power Level

♦ Eutectically mounted to Heat Spreader

♦ Next level integration is a Silver Epoxy-Based Process

♦ Variable Drain Voltage (6-10V) Operation

♦ MSAG™ Process

Description

The MAAP-000074-PED000 is a 2-stage 8W power amplifier with on-chip bias net-

works, eutettically mounted on a 10-mil thick Copper Molybdenum (CuMo) pedes-

tal. This product is fully matched to 50 ohms on both the input and output. It can be

used as a power amplifier stage or as a driver stage in high power applications.

Fabricated using M/A-COM’s repeatable, high performance and highly reliable

GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each device is 100% RF

tested at the die-on-pedestal assembly level to ensure performance compliance.

Primary Applications

♦ SatCom

♦ Radio Communications

♦ Radar

M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes,

planar processing of ion implanted transistors, multiple implant capability enabling

power, low-noise, switch and digital FETs on a single chip, and polyimide scratch

protection for ease of use with automated manufacturing processes. The use of

refractory metals and the absence of platinum in the gate metal formulation pre-

vents hydrogen poisoning when employed in hermetic packaging.

♦ Electronic Warfare

Also Available in:

Description

Die

Ceramic Package

Sample Board (Die)

Sample Board (Pkg)

Mechanical Sample (Die)

Part Number

MAAPGM0074-DIE MAAP-000074-PKG001 MAAP-000074-SMB004 MAAP-000074-SMB001 MAAP-000074-MCH000

Electrical Characteristics: T_B= 30°C¹, Z₀= 50 Ω, V_DD= 10V, I_DQ= 2.1A², P_in= 28 dBm, R_G=40 Ω

Parameter

Symbol

Typical

2.0-8.0

Units

GHz

dBm

Bandwidth

Output Power

P_OUT

P1dB

1-dB Compression Point

Small Signal Gain

Input VSWR

VSWR

1.7:1

2.2:1

Output VSWR

VSWR

I_GG

Gate Current

3.5

Drain Current

2^ndHarmonic, 2-4 GHz

3.5

16.5

I_DD

dBc

2^ndHarmonic, 6-8 GHz

1. T_B= MMIC Base Temperature

2. Adjust V_GGbetween –2.6 and –1.5V to achieve specified I_DQ

M/A-COM Inc. and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

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与MAAPGM0074-DIE相关器件

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MAAPGM0076-DIE	TE	获取价格	Amplifier, Power, 16W 1.3-2.5 GHz
MAAPGM0078-DIE	TE	获取价格	Amplifier, Power, 12W 2.0-6.0 GHz
MAAPGM0079-DIE	TE	获取价格	Amplifier, Power, 20W 7.5-10.5 GHz
MAAPGM0080-DIE	TE	获取价格	Amplifier, Power, 1 W 2-18 GHz
MAAPSM0008	TE	获取价格	1-Watt Power Amplifier 5 - 6 GHz
MAAPSM0008SMB	TE	获取价格	1-Watt Power Amplifier 5 - 6 GHz
MAAPSM0008TR	TE	获取价格	1-Watt Power Amplifier 5 - 6 GHz
MAAPSM0008TR-3000	TE	获取价格	1-Watt Power Amplifier 5 - 6 GHz
MAAPSM0015	TE	获取价格	DC-20 GHz GaAs MMIC Amplifier
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