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MAAPSM0015 PDF预览

MAAPSM0015

更新时间: 2024-11-24 22:46:31
品牌 Logo 应用领域
泰科 - TE 放大器射频微波
页数 文件大小 规格书
3页 162K
描述
DC-20 GHz GaAs MMIC Amplifier

MAAPSM0015 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.17Is Samacsys:N
构造:COMPONENT增益:11 dB
最大工作频率:20000 MHz最小工作频率:
射频/微波设备类型:WIDE BAND MEDIUM POWERBase Number Matches:1

MAAPSM0015 数据手册

 浏览型号MAAPSM0015的Datasheet PDF文件第2页浏览型号MAAPSM0015的Datasheet PDF文件第3页 
Preliminary  
DC-20 GHz GaAs MMIC Amplifier  
Rev. 2.0  
DC-20 GHz GaAs MMIC Amplifier  
Features  
¢ Wide Frequency Range: DC-20 GHz  
¢ On Chip Bias Network  
¢ High Gain : 11 dB  
¢ Gain Flatness: + 0.75 dB  
¢ Typical Psat: 21 dBm  
¢ Return Loss: 12 dB  
2.0 mm  
¢ Low Bias Current : 100mA  
Description  
The M/A-COM MAAPSM0015 is a medium power  
wideband AGC amplifier that typically provides 11 dB  
of gain with 25 dB of AGC range. The circuit topology  
is a six-section traveling wave amplifier using common  
source FETs which provide very wide bandwidth.  
Typical input and output return loss is 12 dB. RF ports  
are DC coupled, enabling the user to customize sys-  
tem corner frequencies. DC bias can be provided  
through the drain termination resistor without the need  
for an external bias inductor. For higher power appli-  
cations, an external inductor can be used to bias the  
amplifier through the RFout or Vd_aux pads. Applica-  
tions include OC-192 12.5 GBit/s receive AGC ampli-  
fier and lithium niobate Mach-Zehnder modulator driver  
amplifer.  
3.0 mm  
Primary Applications  
¢
¢
¢
12.5GBit OC-192 LN/MZ Driver  
12.4GBit OC-192 AGC Receiver  
SONET/SDH  
The MAAPSM0015 requires off-chip decoupling and  
blocking components. Each device is 100% DC and  
RF tested on wafer to ensure performance compliance.  
The device is provided in chip form. M/A-Com fabri-  
cates the MAAPSM0015 using a 0.5 µm gate length  
low noise multi-function self aligned gate (MSAG)  
MESFET process. This process features silicon nitride  
passivation and polimide scratch protection. The die  
thickness is 0.003”.  
Electrical Characteristics  
8V, 100 mA  
Parameter  
Bandwidth  
Typ  
Units  
GHz  
dB  
DC-20  
11  
Gain  
Gain Flatness  
Input Return Loss  
Output Return Loss  
Reverse Isolation  
Psat (+8V, 100 mA)  
Noise Figure  
+ 0.75  
-12  
dB  
dB  
-12  
dB  
>-13  
21  
dB  
dBm  
dB  
7

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