Datasheet > MAAPGM0079-DIE

MAAPGM0079-DIE

更新时间： 2024-11-25 04:17:07

品牌	Logo	应用领域
泰科 - TE		放大器
页数	文件大小	规格书
8页	529K
描述
Amplifier, Power, 20W 7.5-10.5 GHz

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技术参数
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MAAPGM0079-DIE 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	0.197 X 0.321 INCH, 0.003 INCH HEIGHT, HERMETIC SEALED, DIE	Reach Compliance Code：	unknown
风险等级：	5.8	Base Number Matches：	1

MAAPGM0079-DIE 数据手册

Amplifier, Power, 20W

7.5-10.5 GHz

MAAPGM0079-DIE

Rev A

Preliminary Datasheet

Features

♦ 17 Watt Saturated Output Power Level

♦ 20 Watt Saturated Output Power Level over 8-10 GHz Band

♦ Variable Drain Voltage (8-10V) Operation

♦ MSAG™ Process

♦ Robust Stability

Description

The MAAPGM0079-DIE is a 3 stage 20W power amplifier with on-chip bias networks.

This product is fully matched to 50 ohms on both the input and output. It can be used

as a power amplifier stage or as a driver stage in high power applications.

Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs

Multifunction Self-Aligned Gate (MSAG)Process, each device is 100% RF tested on

wafer to ensure performance compliance.

M/A-COM’s MSAG process features robust silicon-like manufacturing processes, pla-

nar processing of ion implanted transistors, multiple implant capability enabling power,

low-noise, switch and digital FETs on a single chip, and polyimide scratch protection

for ease of use with automated manufacturing processes. The use of refractory met-

als and the absence of platinum in the gate metal formulation prevents hydrogen poi-

soning when employed in hermetic packaging.

Primary Applications

♦ SatCom

♦ Commercial Avionics

♦ Radar

Also Available in:

Description

Ceramic Package

Sample Board (Die)

Sample Board (Pkg)

Mechanical Sample (Die)

Part Number

MAAP-000079-PKG001

MAAP-000079-SMB004

MAAP-000079-SMB001

MAAP-000079-MCH000

Electrical Characteristics: T_B= 40°C¹, Z₀= 50 Ω, V_DD= 10V, I_DQ= 4A², P_in= 18 dBm, R_g= 20 Ω

Parameter

Symbol

Typical

7.5-10.5

Units

GHz

dBm

Bandwidth

Output Power

P_OUT

Output Power, 8-10 GHz

1-dB Compression Point

Small Signal Gain

P1dB

Power Added Efficiency

Input VSWR

PAE

VSWR

2.5:1

Output VSWR

VSWR

I_GG

Gate Current

Drain Current, under RF Drive

Output Third Order Intercept

I_DD

dBm

dBc

TOI

IM3

Output Third Order Intermod,

Pout = 39 dBm (DCL)

18.5

1. T_B= MMIC Base Temperature

2. Adjust V_GGbetween –2.6 and –1.5V to achieve specified Idq.

M/A-COM Inc. and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

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