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MAAPGM0029

更新时间： 2024-11-25 04:17:07
品牌 Logo 应用领域
泰科 - TE 放大器功率放大器
页数 文件大小 规格书
5页 205K
描述
3.6-6.5 GHz 1W Power Amplifier

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中文翻译

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MAAPGM0029 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.72Is Samacsys：N
特性阻抗：50 Ω构造：COMPONENT
增益：19 dB最大输入功率 (CW)：21 dBm
最大工作频率：6500 MHz最小工作频率：3500 MHz
射频/微波设备类型：WIDE BAND MEDIUM POWER最大电压驻波比：2
Base Number Matches：1

MAAPGM0029 数据手册

 浏览型号MAAPGM0029的Datasheet PDF文件第2页浏览型号MAAPGM0029的Datasheet PDF文件第3页浏览型号MAAPGM0029的Datasheet PDF文件第4页浏览型号MAAPGM0029的Datasheet PDF文件第5页 
3.6-6.5 GHz 1W Power Amplifier  
MAAPGM0029  
RO-P-DS-3077 A  
Preliminary Information  
Features  
♦ 1 Watt Saturated Output Power Level  
♦ Variable Drain Voltage (4-10V) Operation  
♦ GaAs MSAG® Process  
Primary Applications  
APGM0029  
YWWLLLL  
♦ Wireless Local Loop  
♦ 3.7- 4.2 GHz SatCom  
Description  
The MAAPGM0029 is a packaged, 2-stage, 1W power amplifier  
with on-chip bias networks in a bolt down ceramic package,  
allowing easy assembly. This product is fully matched to 50  
ohms on both the input and output. It can be used as a power  
amplifier stage or as a driver stage in high power applications.  
Pin Number RF Designator  
1
2
3
4
5
6
7
No Connection  
No Connection  
RF IN  
Fabricated using M/A-COM’s repeatable, high performance and  
highly reliable GaAs Multifunction Self-Aligned Gate MESFET  
Process, each device is 100% RF tested on wafer to ensure  
performance compliance.  
No Connection  
VGG  
M/A-COM’s MSAG™ process features robust silicon-like  
manufacturing processes, planar processing of ion implanted  
transistors, multiple implant capability enabling power, low-noise,  
switch and digital FETs on a single chip, and polyimide scratch  
protection for ease of use with automated manufacturing  
processes. The use of refractory metals and the absence of  
platinum in the gate metal formulation prevents hydrogen  
poisoning when employed in hermetic packaging.  
No Connection  
No Connection  
8
RF OUT  
9
No Connection  
VDD  
10  
Maximum Operating Conditions 1  
Parameter  
Absolute Maximum  
Units  
Symbol  
Input Power  
21.0  
+12.0  
-3.0  
dBm  
V
PIN  
VDD  
VGG  
Drain Supply Voltage  
Gate Supply Voltage  
V
Quiescent Drain Current (No RF, 40% IDSS)  
Quiescent DC Power Dissipated (No RF)  
470  
3.2  
mA  
W
IDQ  
PDISS  
Junction Temperature  
Storage Temperature  
Processing Temperature  
180  
-55 to +150  
230  
°C  
°C  
°C  
TJ  
TSTG  
1. Operation outside of these ranges may reduce product reliability.  
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
• North America Tel: 800.366.2266 / Fax: 978.366.2266  
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
Visit www.macom.com for additional data sheets and product information.  
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