MAAP-015036
Power Amplifier, 15 W
8.5 - 10.5 GHz
Rev. V1
Features
Functional Schematic
15 W Power Amplifier
42 dBm Saturated Pulsed Output Power
17 dB Large Signal Gain
PSAT >40% Power Added Efficiency
Dual Sided Bias Architecture
On Chip Bias Circuit
100% On-Wafer DC, RF and Output Power
Testing
100% Visual Inspection to MIL-STD-883 Method
2010
Description
The MAAP-015036 is a two stage GaAs MMIC
power amplifier operating from 8.5 - 10.5 GHz, with
a saturated pulsed output power of 42 dBm and a
large signal gain of 18 dB.
Pin Configuration2
This power amplifier uses GaAs pHEMT device
technology and is based upon optical gate
lithography to ensure high repeatability and
uniformity. The chip has surface passivation for
protection and backside via holes and gold
metallisation to allow a conductive epoxy die attach
process.
1
2
VG1
15
16
17
18
19
20
21
22
23
24
25
26
27
28
VD2
GND
GND
GND
VD1
3
VSS1
4
V1_5
This device is well suited for communications, Point
to Point radio and radar applications.
5
GND
VG2
6
VSS
2
GND
V2_5
7
V2_5
GND
VG2
8
VSS2
9
GND
V1_5
Ordering Information
10
11
12
13
14
VD1
GND
GND
VD2
VSS1
MAAP-015036-DIE
Die in Gel Pack1
GND
VG1
Sample Board
Direct Gate Bias
MAAP-015036-DIEEV1
Sample Board
On-Chip Gate Bias
MAAP-015036-DIEEV2
RFOUT
RFIN
2. Backside metal is RF, DC and thermal ground.
1. Die quantity varies.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support