Datasheet > MAAP-015016-DIEEV1

MAAP-015016-DIEEV1

更新时间： 2024-11-19 01:10:55

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
11页	867K
描述
Ka-Band 4 W Power Amplifier

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MAAP-015016-DIEEV1 数据手册

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MAAP-015016-DIE

Ka-Band 4 W Power Amplifier

32 - 38 GHz

Rev. V1

Features

Functional Diagram



Frequency Range: 32 to 38 GHz

Small Signal Gain: 18 dB

Saturated Power: 37 dBm

Power Added Efficiency: 23%

100% On-Wafer RF and DC Testing

100% Visual Inspection to MIL-STD-883 Method

2010



Bias V_D= 6 V, I_D= 2.5 A, V_G= -0.9 V

Dimensions: 3.09 x 5.67 x 0.05 mm

Description

The MAAP-015016-DIE is

a wideband power

amplifier operating from 32 to 38 GHz, with a

saturated output power of 37 dBm, 23% PAE and

small signal gain of 18 dB.

The design is fully matched to 50 Ohms and

includes on-chip ESD protection and integrated DC

blocking caps on both I/O ports. The device is

manufactured in 0.15 µm GaAs pHEMT device

technology with BCB wafer coating to enhance

ruggedness and repeatability of performance.

Pin Configuration²

Pad

Function

RF_IN

Description

Input, matched to 50 Ω

Gate Voltage Stage 1 - 3

Drain Voltage Stage 1

Drain Voltage Stage 2

Drain Voltage Stage 3

Gate Voltage Stage 4

Drain Voltage Stage 4

Output, matched to 50 Ω

The part is well suited for Radar and

Communications applications.

2,14

3,13

4,12

5,11

6,10

7,9

V_G1,2,3

V_D1

V_D2

Ordering Information¹

V_D3

Part Number

MAAP-015016-DIE

MAAP-015016-DIEEV1

1. Die quantity varies.

Package

V_G4

Die in Gel Pack¹

Evaluation Module

V_D4

RF_OUT

2. Backside metal is RF, DC and thermal ground.

* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

For further information and support please visit:

https://www.macomtech.com/content/customersupport

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