5秒后页面跳转
MA741WA PDF预览

MA741WA

更新时间: 2024-09-16 20:07:39
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管
页数 文件大小 规格书
3页 75K
描述
Rectifier Diode, Schottky, 2 Element, 0.03A, Silicon, ROHS COMPLIANT, SMINI3-F1, SC-79, 3 PIN

MA741WA 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-79包装说明:R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.8配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F3元件数量:2
端子数量:3最大输出电流:0.03 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大反向恢复时间:0.001 µs
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

MA741WA 数据手册

 浏览型号MA741WA的Datasheet PDF文件第2页浏览型号MA741WA的Datasheet PDF文件第3页 
Schottky Barrier Diodes (SBD)  
MA3J741D, MA3J741E (MA741WA, MA741WK)  
Unit : mm  
Silicon epitaxial planar type  
2.1 0.1  
0.425  
1.25 0.1  
0.425  
For switching circuits  
I Features  
1
2
Two MA3J741s are contained in one package (S-mini type 3-pin)  
Low forward rise voltage (VF) and satisfactory wave detection  
efficiency (η)  
3
Small temperature coefficient of forward characteristic  
Extremely low reverse current IR  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage (DC)  
Peak reverse voltage  
Symbol  
VR  
Rating  
Unit  
V
30  
MA3J741D MA3J741E  
Cathode 1 Anode 1  
Cathode 2 Anode 2  
Anode 1,2 Cathode 1,2  
VRM  
IF  
30  
30  
V
EIAJ : SC-70  
Flat S-Mini Type Package  
(3-pin)  
1
2
3
Single  
mA  
Forward current  
(DC)  
Double*  
Single  
20  
Marking Symbol  
MA3J741D : M2P  
MA3J741E : M2R  
IFM  
150  
mA  
Peak forward  
current  
Double*  
110  
Junction temperature  
Storage temperature  
Tj  
125  
°C  
°C  
Internal Connection  
Tstg  
55 to +125  
1
1
3
2
Note)  
* : Value per hcip  
3
2
D
E
I Electrical Characteristics Ta = 25°C  
Parameter  
Reverse current (DC)  
Forward voltage (DC)  
Symbol  
IR  
Conditions  
Min  
Typ  
Max  
1
Unit  
µA  
V
VR = 30 V  
IF = 1 mA  
VF1  
VF2  
Ct  
0.4  
1
IF = 30 mA  
V
Terminal capacitance  
Reverse recovery time*  
VR = 1 V, f = 1 MHz  
1.5  
1
pF  
ns  
trr  
IF = IR = 10 mA  
Irr = 1 mA, RL = 100 Ω  
Detection efficiency  
η
Vin = 3 V(peak), f = 30 MHz  
65  
%
RL = 3.9 k, CL = 10 pF  
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a  
human body and the leakage of current from the operating equipment.  
2. Rated input/output frequency: 2 000 MHz  
3. * : trr measuring instrument  
Bias Application Unit N-50BU  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 1 mA  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 10 mA  
IR = 10 mA  
RL = 100 Ω  
Pulse Generator  
(PG-10N)  
Rs = 50 Ω  
W.F.Analyzer  
(SAS-8130)  
Ri = 50 Ω  
Note) The part number in the parenthesis shows conventional part number.  
532  

与MA741WA相关器件

型号 品牌 获取价格 描述 数据表
MA741WAH PANASONIC

获取价格

Rectifier Diode, Schottky, 2 Element, 0.03A, Silicon
MA741WATX PANASONIC

获取价格

Rectifier Diode, Schottky, 2 Element, 0.03A, Silicon
MA741WKH PANASONIC

获取价格

Rectifier Diode, Schottky, 2 Element, 0.03A, Silicon
MA741WKTX PANASONIC

获取价格

Rectifier Diode, Schottky, 2 Element, 0.03A, Silicon
mA741Y TI

获取价格

GENERAL-PURPOSE OPERATIONAL AMPLIFIERS
MA742 PANASONIC

获取价格

Schottky Barrier Diodes (SBD)
MA742H PANASONIC

获取价格

Rectifier Diode, Schottky, 2 Element, 0.03A, Silicon
MA7430 PANASONIC

获取价格

Zener Diode, 43V V(Z), 6.98%, 0.8W, Silicon, Unidirectional, DO-41, ROHS COMPLIANT, DO-41-
MA743H PANASONIC

获取价格

Rectifier Diode, Schottky, 2 Element, 0.03A, Silicon,
MA743TX PANASONIC

获取价格

Rectifier Diode, Schottky, 2 Element, 0.03A, Silicon,