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MA741WKTX PDF预览

MA741WKTX

更新时间: 2024-11-06 21:17:19
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管
页数 文件大小 规格书
2页 34K
描述
Rectifier Diode, Schottky, 2 Element, 0.03A, Silicon

MA741WKTX 技术参数

生命周期:Obsolete包装说明:R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.83
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PDSO-G3元件数量:2
端子数量:3最高工作温度:150 °C
最大输出电流:0.03 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.15 W认证状态:Not Qualified
最大反向恢复时间:0.001 µs表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:DUALBase Number Matches:1

MA741WKTX 数据手册

 浏览型号MA741WKTX的Datasheet PDF文件第2页 
Schottky Barrier Diodes (SBD)  
MA741WA, MA741WK  
Silicon epitaxial planer type  
Unit : mm  
For the switching circuit  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
Features  
Two elements are incorporated in MA741 (S-Mini type 3 pins)  
Low forward rise voltage VF and satisfactory wave detection effi-  
ciency  
1
2
3
Temperature coefficient of forward characteristic is small.  
Extremely low reverse current IR  
Absolute Maximum Ratings (Ta= 25˚C)  
Parameter  
Reverse voltage (DC)  
Peak reverse voltage  
Symbol  
VR  
Rating  
Unit  
V
30  
30  
MA741WA MA741WK  
Cathode 1 Anode 1  
Cathode 2 Anode 2  
Anode 1, 2 Cathode 1, 2  
EIAJ : SC-70  
Flat S-Mini Type Package  
(3-pin)  
1
VRM  
V
2
3
Single  
Double  
Single  
Double  
30  
Forward current (DC)  
Peak forward current  
IF  
mA  
mA  
20*  
Internal Connection  
150  
IFM  
110*  
125  
1
2
1
2
Junction temperature  
Storage temperature  
* Use value per chip  
Tj  
˚C  
˚C  
3
3
Tstg  
– 55 to + 125  
WA  
WK  
Electrical Characteristics (Ta= 25˚C)  
Symbol  
IR  
Parameter  
Condition  
min  
typ  
max  
Unit  
µA  
V
Reverse current (DC)  
VR = 30V  
IF =1mA  
1
0.4  
1
VF1  
VF2  
Ct  
Forward voltage (DC)  
Terminal capacitance  
Reverse recovery time  
IF = 30mA  
V
VR =1V, f=1MHz  
1.5  
1
pF  
IF = IR=10mA  
trr*  
ns  
%
Irr=1mA, RL=100  
Vin= 3V(peak), f= 30MHz  
RL= 3.9k, CL=10pF  
65  
η
Detection efficiency  
Note 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on charge of a human body and leakage  
from the equipment used.  
2. Rated input/output frequency : 2000MHz  
3. * trr measuring circuit  
Bias Insertion  
Unit N-50BU  
Marking  
Input Pulse  
Output Pulse  
Part Number MA741WA MA741WK  
t
t
p
r
t
10%  
t
rr  
I
F
Symbol  
t
M2P  
M2R  
A
90%  
t =2µs  
V
R
I =1mA  
rr  
I =10mA  
p
F
t =0.35ns  
r
δ=0.05  
I =10mA  
R
R =100Ω  
L
Pulse Generator  
PG-10N  
R =50Ω  
W.F.Analyzer  
SAS-8130  
i
R =50Ω  
s

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