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MA4P1200-401T PDF预览

MA4P1200-401T

更新时间: 2024-11-24 05:48:07
品牌 Logo 应用领域
泰科 - TE 二极管开关测试衰减器
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12页 1494K
描述
High Power PIN Diodes

MA4P1200-401T 数据手册

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MA4P HIPAX™  
High Power PIN Diodes  
V9  
Package Styles  
Features  
High Power Handling  
Low Loss / Low Distortion  
Voltage Ratings up to 1000 Volts  
Passivated Chip for Low Leakage Current  
Low Theta (θ) Due to Full Face Chip Bonding  
Leadless Low Inductance MELF Packages  
Various Package Options  
Available as Chips  
Fully RoHS Compliant  
401 & 402  
1072 & 1091  
Description  
Applications  
M/A-COM Technology Solutions MELF and HIPAX  
PIN diode series are designed for usage in switch  
and attenuator applications requiring high power  
handling and low distortion. The MELF and HIPAX  
PIN diodes incorporate a fully passivated PIN diode  
chip resulting in an extremely low reverse bias  
leakage current. The semiconductor technology  
utilized in the MELF and HIPAX families draws on  
M/A-COM’s substantial experience in PIN diode  
design and wafer fabrication. The result is a device  
which has a thick I-region and long carrier lifetime  
while maintaining low series resistance and  
capacitance values. The chips of the MELF and  
HIPAX PIN diodes are enclosed in a rugged  
ceramic package and is full face bonded to metal  
pins on both the anode and cathode. The result is a  
low loss PIN diode with low thermal resistance due  
to symmetrical thermal paths. The parts are offered  
in either a HIPAX , axial leaded or Metal Electrode  
Leadless Faced (MELF) surface mount packages  
that have a rectangular outline. These rectangular  
SMQ, PIN diodes are designed for high volume tape  
and reel assembly. This easy to use package  
design makes automatic pick and place, indexing  
and assembly, extremely easy. The parallel flat  
surfaces are suitable for most key jaw or vacuum  
pick-up techniques. All solderable surfaces are tin  
plated and compatible with industry standard reflow  
and vapor phase soldering processes.  
HIPAX PIN diodes are designed for use in a wide  
variety of switch and attenuator applications from HF  
through UHF frequencies and at power levels above  
1kW, CW. The internal chip as well as each diode  
assembly has been comprehensively tested and  
characterized to ensure predictable and repeatable  
performance.  
Design Recommendations  
Low Distortion Attenuators  
MA4P4301B  
Surface Mount Switches  
MA4P7101F  
Cellular Radio Antenna Switches  
MA4P1200, MA4P1250  
Absolute Maximum Ratings  
TAMB = +25°C (Unless Otherwise Noted) 1,2  
Parameter  
Absolute Maximum  
D.C. Reverse Voltage  
(See Tables)  
Operating Chip Junction  
Temperature  
-55°C to +175°C  
Storage Temperature  
-55°C to +200°C  
Installation Temperature  
+280°C for 30 Seconds  
Notes  
1.Operation of this device above any one of these  
parameters may cause permanent damage.  
2.Please refer to application note M538 for surface  
mounting instructions.  
North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400  
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
1
India Tel: +91.80.4155721  
China Tel: +86.21.2407.1588  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  

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