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MA4P161-134 PDF预览

MA4P161-134

更新时间: 2024-11-28 14:52:11
品牌 Logo 应用领域
MACOM 开关测试二极管
页数 文件大小 规格书
9页 433K
描述
PIN Diode

MA4P161-134 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:S-CUUC-N1
针数:1Reach Compliance Code:compliant
HTS代码:8541.10.00.40风险等级:0.99
Is Samacsys:N其他特性:LOW DISTORTION
应用:SWITCHING最小击穿电压:100 V
外壳连接:ISOLATED配置:SINGLE
最大二极管电容:0.1 pF二极管元件材料:SILICON
最大二极管正向电阻:1.5 Ω二极管电阻测试电流:10 mA
二极管电阻测试频率:500 MHz二极管类型:PIN DIODE
频带:ULTRA HIGH FREQUENCYJESD-30 代码:S-CUUC-N1
少数载流子标称寿命:0.15 µs元件数量:1
端子数量:1最高工作温度:175 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:UNCASED CHIP峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified子类别:PIN Diodes
表面贴装:YES技术:POSITIVE-INTRINSIC-NEGATIVE
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MA4P161-134 数据手册

 浏览型号MA4P161-134的Datasheet PDF文件第2页浏览型号MA4P161-134的Datasheet PDF文件第3页浏览型号MA4P161-134的Datasheet PDF文件第4页浏览型号MA4P161-134的Datasheet PDF文件第5页浏览型号MA4P161-134的Datasheet PDF文件第6页浏览型号MA4P161-134的Datasheet PDF文件第7页 
Silicon PIN / NIP Diode Chips  
PIN / NIP Diode Chips  
Rev. V28  
Features  
PIN Chip  
Switch & Attenuator Die  
Extensive Selection of I-Region Lengths  
Hermetic  
Glass Passivated Cermachip  
Oxide Passivated Planar Chips  
Voltage Ratings to 3000 V  
Fast Switching Speed  
Low Loss  
Anode  
High Isolation  
RoHS* Compliant  
NIP Chip  
Description  
MACOM offers  
a comprehensive line of low  
capacitance, planar and mesa, silicon PIN/NIP diode  
chips which use ceramic glass and silicon nitride  
passivation technology. The silicon PIN/NIP chip  
series of devices cover a broad spectrum of perfor-  
mance requirements for control circuit applications.  
They are available in several choices of I-region  
lengths and have been optimally designed to mini-  
Cathode  
mize  
parametric trade offs when considering low  
capacitance, low series resistance, and high  
breakdown voltages. Their small size and low  
parasitics, make them an ideal choice for  
broadband, high frequency, micro-strip hybrid  
assemblies.  
Absolute Maximum Ratings1  
TA = +25°C (Unless otherwise specified)  
The attenuator line of PIN diode chips are a planar  
or mesa construction and because of their thicker  
I-regions and predictable RS vs. I characteristics,  
they are well suited for low distortion attenuator  
and switch circuits. Incorporated in the chips  
construction is MACOMs, time proven, hard glass,  
Cermachip process. The hard glass passivation  
completely encapsulates the entire PIN junction area  
resulting in a hermetically sealed chip which has  
been qualified in many military applications. These  
Cermachip diodes are available in a wide range of  
voltages, up to 3,000 volts, which are capable of  
controlling kilowatts of RF power.  
Parameter  
Absolute Maximum  
Per P/N Rs vs. I Graph  
Per Specification Table  
Forward Current (IF)  
Reverse Voltage (VR)  
Power Dissipation (W)  
Operating Temperature  
Storage Temperature  
Junction Temperature  
Mounting Temperature  
175°C – Tambient°C  
Theta  
-55°C to +175°C  
-55°C to +200°C  
+175°C  
+320°C for 10 seconds  
Many of MACOM s silicon PIN diode chips are also available  
in several different package styles. Please refer to the  
Packaged PIN Diode Datasheetfor case style availability  
and electrical specifications located on the MACOM website.  
Also for high voltage, high power devices refer to  
MA4PK2000.  
1. Exceeding these limits may cause permanent damage to the  
chip.  
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.  
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  
DC-0008899  

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