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MA4P274-1225T_1 PDF预览

MA4P274-1225T_1

更新时间: 2024-11-27 04:17:19
品牌 Logo 应用领域
泰科 - TE 二极管衰减器
页数 文件大小 规格书
12页 671K
描述
Quad PIN Diode Attenuator 5 -3000 MHz

MA4P274-1225T_1 数据手册

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Now Offering  
RoHs Compliant  
Equivalent Parts  
Quad PIN Diode p Attenuator  
5 –3000 MHz  
MA4P274-1225T/MA4P7455-1225T  
V1  
Features  
Package Outline  
(Topview)  
·
·
4 PIN Diodes in SOT-25 Plastic Package  
Externally Selectable Bias and RF Match  
Network  
·
·
·
·
·
5 – 3,000 MHz Useable Frequency Band  
+ 43 dBm IP3@ 1 GHz (50 W)  
1.0 dB Loss @ 1 GHz (50 W)  
30 dB Attenuation @ 1 GHz (50 W)  
Lead-Free (RoHS Compliant) equivalent  
available with 260 °C reflow compatibility  
3
2
1
Topview  
Description and Applications  
4
5
M/A-COM's MA4P274-1225T/MA4P7455-1225T is a  
wideband, lower insertion loss, high IP3, Quad PIN  
Diode p Attenuator in a low-cost, surface mount  
SOT-25 package. Four PIN Diodes in one package  
reduce design parasitics and improve circuit density.  
Pin Configuration  
PIN Function  
PIN  
4
Function  
Shunt 1 Bias  
Shunt 2 Bias  
T h e s e  
d e v i c e s  
a r e  
o f f e r e d  
w i t h  
1
2
RF In  
standard Sn/Pb plating, as well as with 100% matte  
Sn plating on our RoHS compliant equivalent device.  
Series  
Bias  
5
These PIN Diode Attenuators perform well where RF  
Signal Amplitude Control is required in 50 W  
Handset Circuits and 75 W Broadband CATV  
Systems. Exceptional Insertion Loss, Attenuation  
Range, and IP3 at <10 mA bias make these devices  
suitable for better power level control in RF  
Amplifiers.  
3
RF Out  
Part Number  
RoHs Compliant Part Number  
MA4P274 -1225  
MA4P7455-1225  
MA4P274 -1225T  
MA4P7455-1225T  
Electrical Specifications @ +25 °C  
Parameter  
Test Conditions  
Units  
Min.  
Typ.  
Max.  
Ct @ 0 V  
100 MHz  
pF  
0.45  
0.50  
Rs @ 1 mA  
Rs @ 10 mA  
Vb  
100 MHz  
100 MHz  
D.C.  
13  
2.3  
18  
W
W
V
3.0  
125  
150  
1000  
Minority Carrier  
Lifetime  
( 50 % - 90 % ) Voltage  
If = + 10mA, Ir = - 6mA Pulse  
@ 100 kHz Sq Wave  
nS  
2000  
100  
Power  
Dissipation  
D.C. and F = 5 – 3,000 MHz  
Derate linearly to 0 mW at 125 C  
Using 1,000 deg-C/W  
mW  
Thermal Resistance  
RF Incident Power  
F = 5 – 3,000 MHz  
dBm  
+ 20  
Vshunt 1 & 2 Diode Bias = 0.75 V  
Vseries Diode Bias = 0 to 20 V  
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  

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