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M68AR256ML70ZB6F PDF预览

M68AR256ML70ZB6F

更新时间: 2024-09-18 20:08:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器内存集成电路
页数 文件大小 规格书
21页 112K
描述
256KX16 STANDARD SRAM, 70ns, PBGA48, 6 X 7 MM, 0.75 MM PITCH, LEAD FREE, TFBGA-48

M68AR256ML70ZB6F 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:BGA包装说明:6 X 7 MM, 0.75 MM PITCH, LEAD FREE, TFBGA-48
针数:48Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.84Is Samacsys:N
最长访问时间:70 nsI/O 类型:COMMON
JESD-30 代码:R-PBGA-B48JESD-609代码:e1
长度:7 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:48
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:1.8 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.000003 A
最小待机电流:1 V子类别:SRAMs
最大压摆率:0.006 mA最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:6 mmBase Number Matches:1

M68AR256ML70ZB6F 数据手册

 浏览型号M68AR256ML70ZB6F的Datasheet PDF文件第2页浏览型号M68AR256ML70ZB6F的Datasheet PDF文件第3页浏览型号M68AR256ML70ZB6F的Datasheet PDF文件第4页浏览型号M68AR256ML70ZB6F的Datasheet PDF文件第5页浏览型号M68AR256ML70ZB6F的Datasheet PDF文件第6页浏览型号M68AR256ML70ZB6F的Datasheet PDF文件第7页 
M68AR256M  
4 Mbit (256K x16) 1.8V Asynchronous SRAM  
FEATURES SUMMARY  
SUPPLY VOLTAGE: 1.65 to 1.95V  
256K x 16 bits SRAM with OUTPUT ENABLE  
EQUAL CYCLE and ACCESS TIME: 55ns,  
70ns  
Figure 1. Packages  
FBGA  
SINGLE BYTE READ/WRITE  
LOW STANDBY CURRENT  
LOW VCC DATA RETENTION: 1.0V  
TRI-STATE COMMON I/O  
AUTOMATIC POWER DOWN  
TFBGA48 PACKAGE  
TFBGA48 (ZB)  
6x7mm  
Compliant with Lead-Free Soldering Pro-  
cesses  
Standard or Lead-Free Option  
September 2004  
1/21  
 
 

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