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M68AR512DL70ZB6 PDF预览

M68AR512DL70ZB6

更新时间: 2024-11-08 19:39:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器内存集成电路
页数 文件大小 规格书
19页 422K
描述
512KX16 STANDARD SRAM, 70ns, PBGA48, 8 X 10 MM, 0.75 MM PITCH, TFBGA-48

M68AR512DL70ZB6 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:8 X 10 MM, 0.75 MM PITCH, TFBGA-48
针数:48Reach Compliance Code:not_compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
JESD-609代码:e0长度:10 mm
内存密度:8388608 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:48字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA48,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.8 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.000001 A最小待机电流:1 V
子类别:SRAMs最大压摆率:0.015 mA
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8 mm
Base Number Matches:1

M68AR512DL70ZB6 数据手册

 浏览型号M68AR512DL70ZB6的Datasheet PDF文件第2页浏览型号M68AR512DL70ZB6的Datasheet PDF文件第3页浏览型号M68AR512DL70ZB6的Datasheet PDF文件第4页浏览型号M68AR512DL70ZB6的Datasheet PDF文件第5页浏览型号M68AR512DL70ZB6的Datasheet PDF文件第6页浏览型号M68AR512DL70ZB6的Datasheet PDF文件第7页 
M68AR512D  
8 Mbit (512Kb x16) 1.8V Asynchronous SRAM  
FEATURES SUMMARY  
I SUPPLY VOLTAGE: 1.65V to 1.95V  
Figure 1. Package  
I 512Kb x16 bit SRAM with OUTPUT ENABLE  
I EQUAL CYCLE and ACCESS TIMES: 55ns,  
70ns  
I SINGLE BYTE READ/WRITE  
I LOW STANDBY CURRENT  
BGA  
I LOW V  
DATA RETENTION: 1.0V  
CC  
I TRI-STATE COMMON I/O  
I AUTOMATIC POWER DOWN  
I DUAL CHIP ENABLE for EASY DENSITY  
EXPANSION  
TGA48 (ZB)  
6 x 7mm  
February 2004  
1/19  

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