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M68AR512DN70ZB6T PDF预览

M68AR512DN70ZB6T

更新时间: 2024-11-07 22:11:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路静态存储器
页数 文件大小 规格书
19页 142K
描述
8 Mbit 512K x16 1.8V Asynchronous SRAM

M68AR512DN70ZB6T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:6 X 7 MM, 0.75 MM PITCH, TFBGA-48
针数:48Reach Compliance Code:not_compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92Is Samacsys:N
最长访问时间:70 nsI/O 类型:COMMON
JESD-30 代码:R-PBGA-B48JESD-609代码:e0
长度:7 mm内存密度:8388608 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:48
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:1.8 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.000008 A
最小待机电流:1 V子类别:SRAMs
最大压摆率:0.012 mA最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:6 mmBase Number Matches:1

M68AR512DN70ZB6T 数据手册

 浏览型号M68AR512DN70ZB6T的Datasheet PDF文件第2页浏览型号M68AR512DN70ZB6T的Datasheet PDF文件第3页浏览型号M68AR512DN70ZB6T的Datasheet PDF文件第4页浏览型号M68AR512DN70ZB6T的Datasheet PDF文件第5页浏览型号M68AR512DN70ZB6T的Datasheet PDF文件第6页浏览型号M68AR512DN70ZB6T的Datasheet PDF文件第7页 
M68AR512D  
8 Mbit (512K x16) 1.8V Asynchronous SRAM  
FEATURES SUMMARY  
SUPPLY VOLTAGE: 1.65 to 1.95V  
512K x 16 bits SRAM with OUTPUT ENABLE  
EQUAL CYCLE and ACCESS TIMES: 70ns  
SINGLE BYTE READ/WRITE  
Figure 1. Packages  
BGA  
LOW STANDBY CURRENT  
LOW V  
DATA RETENTION: 1.0V  
CC  
TFBGA48 (ZB)  
6 x 7mm  
TRI-STATE COMMON I/O  
AUTOMATIC POWER DOWN  
DUAL CHIP ENABLE for EASY DEPTH  
EXPANSION  
BGA  
TFBGA48 (ZB)  
8 x 10mm  
October 2002  
1/19  

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