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M68AW031AL70N6U PDF预览

M68AW031AL70N6U

更新时间: 2024-11-07 22:05:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器
页数 文件大小 规格书
20页 151K
描述
256 Kbit (32K x8) 3.0V Asynchronous SRAM

M68AW031AL70N6U 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:8 X 13.40 MM, PLASTIC, TSOP-28
针数:28Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.88最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G28
JESD-609代码:e0长度:11.8 mm
内存密度:262144 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP28,.53,22封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
认证状态:Not Qualified座面最大高度:1.25 mm
最大待机电流:0.000006 A最小待机电流:1.5 V
子类别:SRAMs最大压摆率:0.03 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.55 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8 mm
Base Number Matches:1

M68AW031AL70N6U 数据手册

 浏览型号M68AW031AL70N6U的Datasheet PDF文件第2页浏览型号M68AW031AL70N6U的Datasheet PDF文件第3页浏览型号M68AW031AL70N6U的Datasheet PDF文件第4页浏览型号M68AW031AL70N6U的Datasheet PDF文件第5页浏览型号M68AW031AL70N6U的Datasheet PDF文件第6页浏览型号M68AW031AL70N6U的Datasheet PDF文件第7页 
M68AW031A  
256 Kbit (32K x8) 3.0V Asynchronous SRAM  
FEATURES SUMMARY  
SUPPLY VOLTAGE: 2.7 to 3.6V  
Figure 1. Packages  
32K x 8 bits SRAM with OUTPUT ENABLE  
EQUAL CYCLE and ACCESS TIME: 70ns  
LOW STANDBY CURRENT  
LOW V  
DATA RETENTION: 1.5V  
CC  
TRI-STATE COMMON I/O  
AUTOMATIC POWER DOWN  
SO28 (MS)  
TSOP28 (N)  
8 x 13.4 mm  
TSOP28 (NS)  
8 x 13.4 mm (Reverse)  
October 2002  
1/19  

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32KX8 STANDARD SRAM, 55ns, PDSO28, 0.330 INCH, PLASTIC, SO-28
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32KX8 STANDARD SRAM, 55ns, PDSO28, 0.330 INCH, PLASTIC, SO-28
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32KX8 STANDARD SRAM, 55ns, PDSO28, 0.330 INCH, PLASTIC, SO-28
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32KX8 STANDARD SRAM, 55ns, PDSO28, 8 X 13.40 MM, PLASTIC, TSOP-28