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M68AW064FL55ZB6 PDF预览

M68AW064FL55ZB6

更新时间: 2024-11-21 20:10:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器内存集成电路
页数 文件大小 规格书
18页 233K
描述
IC,SRAM,64KX16,CMOS,BGA,48PIN,PLASTIC

M68AW064FL55ZB6 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.84
最长访问时间:55 nsI/O 类型:COMMON
JESD-30 代码:R-PBGA-B48JESD-609代码:e1
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:16端子数量:48
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA48,6X8,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
并行/串行:PARALLEL电源:3/3.3 V
认证状态:Not Qualified最大待机电流:0.000015 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.02 mA表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
Base Number Matches:1

M68AW064FL55ZB6 数据手册

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M68AW064F  
1 Mbit (64K x16) 3.0V Asynchronous SRAM  
FEATURES SUMMARY  
SUPPLY VOLTAGE: 2.7 to 3.6V  
Figure 1. Packages  
64K x 16 bits SRAM with OUTPUT ENABLE  
EQUAL CYCLE and ACCESS TIME: 55ns and  
BGA  
70ns  
LOW STANDBY CURRENT  
LOW V  
DATA RETENTION: 2.0V  
CC  
TFBGA48 (ZB)  
6 x 8 solder balls  
TRI-STATE COMMON I/O  
AUTOMATIC POWER DOWN  
April 2003  
1/18  

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