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M68AR512DL55ZB1 PDF预览

M68AR512DL55ZB1

更新时间: 2024-11-08 19:39:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器内存集成电路
页数 文件大小 规格书
19页 422K
描述
512KX16 STANDARD SRAM, 55ns, PBGA48, 8 X 10 MM, 0.75 MM PITCH, TFBGA-48

M68AR512DL55ZB1 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA,针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:55 nsJESD-30 代码:R-PBGA-B48
长度:10 mm内存密度:8388608 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:48
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
宽度:8 mmBase Number Matches:1

M68AR512DL55ZB1 数据手册

 浏览型号M68AR512DL55ZB1的Datasheet PDF文件第2页浏览型号M68AR512DL55ZB1的Datasheet PDF文件第3页浏览型号M68AR512DL55ZB1的Datasheet PDF文件第4页浏览型号M68AR512DL55ZB1的Datasheet PDF文件第5页浏览型号M68AR512DL55ZB1的Datasheet PDF文件第6页浏览型号M68AR512DL55ZB1的Datasheet PDF文件第7页 
M68AR512D  
8 Mbit (512Kb x16) 1.8V Asynchronous SRAM  
FEATURES SUMMARY  
I SUPPLY VOLTAGE: 1.65V to 1.95V  
Figure 1. Package  
I 512Kb x16 bit SRAM with OUTPUT ENABLE  
I EQUAL CYCLE and ACCESS TIMES: 55ns,  
70ns  
I SINGLE BYTE READ/WRITE  
I LOW STANDBY CURRENT  
BGA  
I LOW V  
DATA RETENTION: 1.0V  
CC  
I TRI-STATE COMMON I/O  
I AUTOMATIC POWER DOWN  
I DUAL CHIP ENABLE for EASY DENSITY  
EXPANSION  
TGA48 (ZB)  
6 x 7mm  
February 2004  
1/19  

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