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M5M5W816WG-10H PDF预览

M5M5W816WG-10H

更新时间: 2024-02-05 22:09:36
品牌 Logo 应用领域
三菱 - MITSUBISHI 存储内存集成电路静态存储器
页数 文件大小 规格书
8页 89K
描述
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM

M5M5W816WG-10H 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA48,6X8,30
针数:48Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.83Is Samacsys:N
最长访问时间:100 nsI/O 类型:COMMON
JESD-30 代码:R-PBGA-B48JESD-609代码:e0
长度:8.5 mm内存密度:8388608 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:48
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:1.8/2.7 V认证状态:Not Qualified
座面最大高度:1.06 mm最大待机电流:0.000015 A
最小待机电流:1 V子类别:SRAMs
最大压摆率:0.05 mA最大供电电压 (Vsup):2.7 V
最小供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7 mm
Base Number Matches:1

M5M5W816WG-10H 数据手册

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MITSUBISHI LSIs  
1999.1.15  
Ver. 0.1  
M5M5W816WG -85L, 10L, 85H, 10H  
-85LI, 10LI, 85HI, 10HI  
PRELIMINARY  
Notice: This is not a final specification.  
Some parametric limits are subject to change  
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM  
Those are summarized in the part name table below.  
DESCRIPTION  
FEATURES  
- Single 1.8~2.7V power supply  
- Small stand-by current: 0.1µA (2.7V, typ.)  
- No clocks, No refresh  
The M5M5W816 is a family of low voltage 8-Mbit static RAMs  
organized as 524288-words by 16-bit, fabricated by Mitsubishi's  
high-performance 0.18µm CMOS technology.  
- Data retention supply voltage =1.0V  
- All inputs and outputs are TTL compatible.  
- Easy memory expansion by S1, S2, BC1 and BC2  
- Common Data I/O  
- Three-state outputs: OR-tie capability  
- OE prevents data contention in the I/O bus  
- Process technology: 0.18µm CMOS  
- Package: 48ball 7.0mm x 8.5mm CSP  
The M5M5W816 is suitable for memory applications where a  
simple interfacing , battery operating and battery backup are the  
important design objectives.  
M5M5W816WG is packaged in a CSP (chip scale package),  
with the outline of 7.0mm x 8.5mm, ball matrix of 6 x 8 (48ball)  
and ball pitch of 0.75mm. It gives the best solution for a compaction  
of mounting area as well as flexibility of wiring pattern of printed  
circuit boards.  
From the point of operating temperature, the family is divided  
into two versions; "Standard" and "I-version".  
Active  
current  
Icc1  
(2.7V, typ.)  
Stand-by current (Vcc=2.7V)  
Version,  
Power  
Supply  
Access time  
max.  
Ratings (max.)  
* Typical  
Part name  
Operating  
temperature  
25°C 40°C 25°C 40°C 70°C 85°C  
M5M5W816WG -85L  
M5M5W816WG -10L  
M5M5W816WG -85H  
M5M5W816WG -10H  
M5M5W816WG -85LI  
M5M5W816WG -10LI  
M5M5W816WG -85HI  
M5M5W816WG -10HI  
85ns  
100ns  
85ns  
100ns  
85ns  
100ns  
85ns  
100ns  
---  
1
---  
2
---  
---  
1.8 ~ 2.7V  
1.8 ~ 2.7V  
1.8 ~ 2.7V  
1.8 ~ 2.7V  
0.1  
0.1  
0.2  
0.2  
16  
8
Standard  
0 ~ +70°C  
40mA  
(10MHz)  
5mA  
---  
---  
(1MHz)  
16  
8
30  
15  
0.1  
0.1  
0.2  
0.2  
I-version  
-40 ~ +85°C  
1
2
* Typical parameter indicates the value for the center  
of distribution, and not 100% tested.  
PIN CONFIGURATION  
(TOP VIEW)  
1
2
3
4
5
6
A
A0  
BC1  
A1  
A2  
S2  
OE  
DQ9  
B
A3  
A5  
BC2  
A4  
A6  
S1  
DQ1  
DQ3  
Pin  
Function  
A0 ~ A18 Address input  
C DQ10 DQ11  
DQ2  
DQ1 ~ DQ16  
Data input / output  
Chip select input 1  
Chip select input 2  
Write control input  
Output enable input  
Lower Byte (DQ1 ~ 8)  
Upper Byte (DQ9 ~ 16)  
Power supply  
D
GND  
VCC  
DQ12  
DQ13  
DQ14  
A17  
A7  
DQ4  
DQ5  
VCC  
GND  
S1  
S2  
E
F
GND  
A16  
W
DQ15  
A14  
A15  
DQ6  
DQ7  
DQ8  
N.C.  
OE  
BC1  
BC2  
Vcc  
GND  
DQ16  
A18  
G
H
N.C.  
A8  
A12  
A9  
A13  
A10  
W
A11  
Ground supply  
Outline: 48FHA  
NC: No Connection  
1
MITSUBISHI ELECTRIC  

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