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M5M5Y816WG-55HI/70HI/85HI PDF预览

M5M5Y816WG-55HI/70HI/85HI

更新时间： 2024-02-06 07:41:46
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M5M5Y816WG-55HI/70HI/85HI 数据手册

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MITSUBISHI LSIs  
2002.04.05  
Ver. 2.1  
M5M5Y816WG -55HI, -70HI, -85HI  
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM  
Those are summarized in the part name table below.  
FEATURES  
DESCRIPTION  
- Single 1.65~2.3V power supply  
The M5M5Y816 is a f amily of low v oltage 8-Mbit static RAMs  
organized as 524288-words by 16-bit, f abricated by Mitsubishi's  
high-perf ormance 0.18µm CMOS technology .  
The M5M5Y816 is suitable f or memory applications where a  
simple interfacing , battery operating and battery backup are the  
important design objectiv es.  
- Small stand-by current: 0.2µA (2.3V, ty p.)  
- No clocks, No ref resh  
- Data retention supply v oltage =1.3V  
- All inputs and outputs are TTL compatible.  
- Easy memory expansion by S1#, S2, BC1# and BC2#  
- Common Data I/O  
M5M5Y816WG is packaged in a CSP (chip scale package),  
with the outline of 7.5mm x 8.5mm, ball matrix of 6 x 8 (48ball)  
and ball pitch of 0.75mm. It giv es the best solution f or  
a compaction  
- Three-state outputs: OR-tie capability  
- OE prev ents data contention in the I/O bus  
- Process technology: 0.18µm CMOS  
- Package: 48ball 7.5mm x 8.5mm CSP  
of mounting area as well as f lexibility of wiring pattern of printed  
circuit boards.  
Activ e  
Stand-by current (µA)  
Version,  
Power  
Access time  
max.  
current  
Ratings (max.)  
* Ty pical  
Part name  
Operating  
Icc1  
Supply  
25°C 40°C 25°C 40°C 70°C 85°C  
(2.3V, max)  
temperature  
55ns  
1.65 ~ 2.3V  
M5M5Y816WG -55HI  
30mA  
(10MHz)  
3mA  
I-version  
-40 ~ +85°C  
0.4  
0.2  
2
4
15  
30  
70ns  
85ns  
1.65 ~ 2.3V  
1.65 ~ 2.3V  
M5M5Y816WG -70HI  
M5M5Y816WG -85HI  
(1MHz)  
* Typical parameter indicates the value for the center  
of distribution at 2.3V, and not 100% tested.  
PIN CONFIGURATION  
(TOP VIEW)  
1
2
3
4
5
6
A0  
BC1#  
A1  
A2  
S2  
A
B
C
D
E
F
OE#  
Pin  
A0 ~ A18  
DQ1 ~ DQ16  
S1#  
Function  
DQ16  
A3  
A5  
A4  
S1#  
DQ1  
DQ3  
BC2#  
DQ15  
Address input  
Data input / output  
Chip select input 1  
Chip select input 2  
Write control input  
Output enable input  
Lower By te (DQ1 ~ 8)  
Upper By te (DQ9 ~ 16)  
Power supply  
DQ14  
A6  
A7  
DQ2  
S2  
A17  
GND DQ13  
VCC  
GND  
DQ4  
DQ5  
W#  
OE  
NCor  
GND*  
VCC  
DQ11  
DQ9  
A18  
A16  
A15  
A13  
A10  
DQ12  
DQ10  
N.C.  
A8  
BC1#  
BC2#  
A14  
A12  
A9  
DQ7  
DQ6  
DQ8  
N.C.  
G
H
W#  
Vcc  
GND  
Ground supply  
A11  
Outline: 48F7Q  
NC: No Connection  
*Don't connect E3 ball to v oltage lev el more than 0V  
1
MITSUBISHI ELECTRIC  
1234567...9

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