是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | BGA |
包装说明: | BGA, BGA209,11X19,40 | 针数: | 209 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.67 |
Is Samacsys: | N | 最长访问时间: | 3.2 ns |
其他特性: | PIPELINED ARCHITECTURE | 最大时钟频率 (fCLK): | 200 MHz |
I/O 类型: | COMMON | JESD-30 代码: | R-PBGA-B209 |
长度: | 22 mm | 内存密度: | 18874368 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 36 |
功能数量: | 1 | 端子数量: | 209 |
字数: | 524288 words | 字数代码: | 512000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 512KX36 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装等效代码: | BGA209,11X19,40 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 1.8 V | 认证状态: | Not Qualified |
座面最大高度: | 2.2 mm | 最大待机电流: | 0.02 A |
最小待机电流: | 1.7 V | 子类别: | SRAMs |
最大压摆率: | 0.45 mA | 最大供电电压 (Vsup): | 1.95 V |
最小供电电压 (Vsup): | 1.7 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | BALL |
端子节距: | 1 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 14 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M5M5Y5636TG-22 | RENESAS |
获取价格 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM | |
M5M5Y5636TG-22 | MITSUBISHI |
获取价格 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM | |
M5M5Y5636TG-25 | MITSUBISHI |
获取价格 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM | |
M5M5Y5636TG-25 | RENESAS |
获取价格 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM | |
M5M5Y5672TG-20 | MITSUBISHI |
获取价格 |
18874368-BIT(262144-WORD BY 72-BIT) NETWORK SRAM | |
M5M5Y5672TG-20 | RENESAS |
获取价格 |
18874368-BIT(262144-WORD BY 72-BIT) NETWORK SRAM | |
M5M5Y5672TG-22 | RENESAS |
获取价格 |
18874368-BIT(262144-WORD BY 72-BIT) NETWORK SRAM | |
M5M5Y5672TG-22 | MITSUBISHI |
获取价格 |
18874368-BIT(262144-WORD BY 72-BIT) NETWORK SRAM | |
M5M5Y5672TG-25 | RENESAS |
获取价格 |
18874368-BIT(262144-WORD BY 72-BIT) NETWORK SRAM | |
M5M5Y5672TG-25 | MITSUBISHI |
获取价格 |
18874368-BIT(262144-WORD BY 72-BIT) NETWORK SRAM |