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M5M29GB800AVP-70 PDF预览

M5M29GB800AVP-70

更新时间: 2024-09-17 20:56:23
品牌 Logo 应用领域
三菱 - MITSUBISHI 光电二极管内存集成电路
页数 文件大小 规格书
22页 1604K
描述
Flash, 512KX16, 70ns, PDSO48

M5M29GB800AVP-70 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:TSSOP, TSSOP48,.8,20Reach Compliance Code:unknown
风险等级:5.92最长访问时间:70 ns
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES数据轮询:NO
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:16部门数/规模:1,6,15
端子数量:48字数:524288 words
字数代码:512000最高工作温度:70 °C
最低工作温度:组织:512KX16
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH页面大小:128/256 words
并行/串行:PARALLEL电源:3/3.3 V
认证状态:Not Qualified就绪/忙碌:YES
部门规模:16K,8K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.04 mA
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:NO
类型:NOR TYPEBase Number Matches:1

M5M29GB800AVP-70 数据手册

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