Datasheet > M5M29KB

M5M29KB

更新时间： 2024-09-17 04:18:15

品牌	Logo	应用领域
瑞萨 - RENESAS		闪存
页数	文件大小	规格书
32页	274K
描述
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

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中文翻译

获取价格

数据手册

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M5M29KB 数据手册

Renesas LSIs

M5M29KB/T331AVP

33,554,432-BIT (4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT)

CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION

M5M29KB/T331AVP provides for Software Lock Release

The M5M29KB/T331AVP are 3.3V-only high speed

function. Usually, all memory blocks are locked and can not

be programmed or erased, when WP# is low. Using Software

Lock Release function, program or erase operation can be

executed.

33,554,432-bit CMOS boot block FLASH Memories with

alternating BGO(Back Ground Operation) feature. The BGO

feature of the device allows Program or Erase operations to be

performed in one bank while the device simultaneously allows

Read operations to be performed on the other bank.

FEATURES

This BGO feature is suitable for mobile and personal

computing, and communication products.

Access time

Random

Page

70ns (Max.)

25ns(Max.)

Supply voltage

VCC= 3.0 ~ 3.6V

The M5M29KB/T331AVP are fabricated by CMOS technology

for the peripheral circuit and DINOR IV(Divided bit-line NOR IV)

architecture for the memory cell, and are available in 48pin

TSOP(I) for lead free use.

Ambient temperature

Package

Ta=-40 ~ 85 °C

48pin TSOP(Type-I), Lead pitch 0.5mm

Outer-lead finishing : Sn-Cu

APPLICATION

Digital Cellar Phone, Telecommunication,

PDA, Car Navigation System, Video Game Machine

PIN CONFIGURATION (TOP VIEW)

A15

A14

A13

A12

A11

A10

A16

BYTE#

GND

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ5

A19

A20

WE#

RP#

DQ12

DQ4

VCC

DQ11

DQ3

M5M29KB/T331AVP

WP#

RY/BY#

A18

A17

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE#

GND

CE#

Outline

48P3R-C

20.0 mm

VCC

GND

A0-A21

DQ0-DQ15

CE#

: VCC

: GND

: Address

: Data I/O

: Chip enable

: Output enable

WE#

WP#

RP#

BYTE#

RY/BY#

: Write enable

: Write protect

: Reset power down

: Byte enable

: Ready/Busy

OE#

: Non Connection

Rev.1.0_48a_bezz

12 3 4 5 6 7...32

中文翻译

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与M5M29KB相关器件

型号	品牌	获取价格	描述	数据表
M5M29KB/T331AVP	RENESAS	获取价格	CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29KB331ATP	RENESAS	获取价格	2MX16 FLASH 3.3V PROM, 70ns, PDSO52, 0.350 INCH, 0.40 MM PITCH, LEAD FREE, PLASTIC, TSOP2-
M5M29KB331AVP	RENESAS	获取价格	IC,EEPROM,NOR FLASH,2MX16/4MX8,CMOS,TSSOP,48PIN,PLASTIC
M5M29KB641ATP	RENESAS	获取价格	4MX16 FLASH 3.3V PROM, 70ns, PDSO52, 0.350 INCH, 0.40 MM PITCH, LEAD FREE, PLASTIC, TSOP2-
M5M29KB641AVP	RENESAS	获取价格	4MX16 FLASH 3.3V PROM, 70ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-
M5M29KB800AVP-10	MITSUBISHI	获取价格	Flash, 512KX16, 100ns, PDSO48
M5M29KB800AVP-10I	MITSUBISHI	获取价格	Flash, 512KX16, 100ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
M5M29KB800AVP-70	MITSUBISHI	获取价格	Flash, 512KX16, 70ns, PDSO48
M5M29KB800AVP-70I	MITSUBISHI	获取价格	Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
M5M29KB800AVP-80	MITSUBISHI	获取价格	Flash, 512KX16, 80ns, PDSO48

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