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M5M29KT800AVP-80I PDF预览

M5M29KT800AVP-80I

更新时间： 2023-07-15 00:00:00
品牌 Logo 应用领域
三菱 - MITSUBISHI 光电二极管
页数 文件大小 规格书
22页 236K
描述
Flash, 512KX16, 80ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48

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M5M29KT800AVP-80I 数据手册

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MITSUBISHI LSIs  
M5M29KB/T800AVP
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)  
CMOS 5.0V-ONLY, BLOCK ERASE FLASH MEMORY  
DESCRIPTION  
The MITSUBISHI Mobile FLASH M5M29KB/T800AVP is 5.0V-only high speed 8,388,608-bit CMOS boot block Flash Memories with  
alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in  
one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for  
mobile and personal computing, and communication products. The M5M29KB/T800AVP is fabricated by CMOS technology for the  
peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 48pin TSOP(I) .  
FEATURES  
Organization  
.................................  
.................................  
524,288 word x 16bit  
1,048,576 word x 8 bit  
VCC = 4.5~5.5V  
Boot Block  
M5M29KB800AVP  
M5M29KT800AVP  
...........................  
...........................  
Bottom Boot  
Top Boot  
.............................  
Supply voltage ................................  
Other Functions  
..............................  
..............................  
Access time  
-80  
80ns  
Soft Ware Command Control  
Selective Block Lock  
-1I 100ns  
Erase Suspend/Resume  
Program Suspend/Resume  
Status Register Read  
Alternating Back Ground Program/Erase Operation  
Between Bank(I) and Bank(II)  
Power Dissipation  
Read  
..............................  
110 mW (Max. at 5MHz)  
0.25mW (typ.)  
..........  
.................................  
.................................  
(After Automatic Power saving)  
Program/Erase  
Standby  
220 mW (Max.)  
0.25mW (typ.)  
.......................  
Package  
Deep power down mode  
Auto program for Bank(I)  
0.25mW (typ.)  
48-Lead, 12mm x 20mm TSOP (type-I)  
.................................  
Program Time  
Program Unit  
4ms (typ.)  
.........................  
.........................  
(Byte Program)  
1word/1byte  
(Page Program)  
128word/256byte  
APPLICATION  
Auto program for Bank(II)  
Code Storage PC BIOS  
.................................  
Program Time  
Program Unit  
Auto Erase  
Erase time  
4ms (typ.)  
Digital Cellular Phone/Telecommunication  
.................................  
128word/256byte  
.................................  
40 ms (typ.)  
Erase Unit  
.....................  
..............  
Parameter Block  
......................  
Bank(I) Boot Block  
8Kword/16Kbyte x 1  
4Kword/8Kbyte x 6  
32Kword/64Kbyte x 15  
Bank(II) Main Block  
.........................................  
Program/Erase cycles  
100Kcycles  
PIN CONFIGURATION (TOP VIEW)  
800AVP  
800AVP  
1
2
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
A16  
A15  
A14  
BYTE#  
GND  
DQ15/A-1  
DQ7  
3
A13  
4
A12  
5
A11  
6
DQ14  
DQ6  
A10  
7
A9  
8
DQ13  
DQ5  
A8  
9
NC  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
DQ12  
DQ4  
NC  
WE#  
RP#  
NC  
VCC  
M5M29KB/T  
800AVP  
DQ11  
DQ3  
WP1#  
RY/BY#  
DQ10  
DQ2  
A18  
A17  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
DQ9  
DQ1  
DQ8  
DQ0  
OE#  
GND  
CE#  
A0  
Outline 48pin TSOP type-I (12 X 20mm)  
VP(Normal bend): 48P3E-B  
NC : NO CONNECTION  
June 1998 , Rev.3.1  
1
1234567...22

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