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M5M29KB/T331AVP PDF预览

M5M29KB/T331AVP

更新时间： 2024-11-07 03:14:59
品牌 Logo 应用领域
瑞萨 - RENESAS 闪存
页数 文件大小 规格书
32页 274K
描述
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

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中文翻译

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M5M29KB/T331AVP 数据手册

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Renesas LSIs  
M5M29KB/T331AVP  
33,554,432-BIT (4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT)  
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY  
DESCRIPTION  
M5M29KB/T331AVP provides for Software Lock Release  
The M5M29KB/T331AVP are 3.3V-only high speed  
function. Usually, all memory blocks are locked and can not  
be programmed or erased, when WP# is low. Using Software  
Lock Release function, program or erase operation can be  
executed.  
33,554,432-bit CMOS boot block FLASH Memories with  
alternating BGO(Back Ground Operation) feature. The BGO  
feature of the device allows Program or Erase operations to be  
performed in one bank while the device simultaneously allows  
Read operations to be performed on the other bank.  
FEATURES  
This BGO feature is suitable for mobile and personal  
computing, and communication products.  
Access time  
Random  
Page  
70ns (Max.)  
25ns(Max.)  
Supply voltage  
VCC= 3.0 ~ 3.6V  
The M5M29KB/T331AVP are fabricated by CMOS technology  
for the peripheral circuit and DINOR IV(Divided bit-line NOR IV)  
architecture for the memory cell, and are available in 48pin  
TSOP(I) for lead free use.  
Ambient temperature  
Package  
Ta=-40 ~ 85 °C  
48pin TSOP(Type-I), Lead pitch 0.5mm  
Outer-lead finishing : Sn-Cu  
APPLICATION  
Digital Cellar Phone, Telecommunication,  
PDA, Car Navigation System, Video Game Machine  
PIN CONFIGURATION (TOP VIEW)  
A15  
A14  
A13  
A12  
A11  
A10  
A9  
1
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
A16  
2
BYTE#  
GND  
DQ15/A-1  
DQ7  
3
4
5
6
DQ14  
DQ6  
7
A8  
8
DQ13  
DQ5  
A19  
A20  
WE#  
RP#  
NC  
9
DQ12  
DQ4  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
VCC  
DQ11  
DQ3  
M5M29KB/T331AVP  
WP#  
RY/BY#  
A18  
A17  
A7  
DQ10  
DQ2  
DQ9  
DQ1  
A6  
DQ8  
A5  
DQ0  
OE#  
A4  
GND  
CE#  
A3  
A2  
A0  
A1  
Outline  
48P3R-C  
20.0 mm  
VCC  
GND  
A0-A21  
DQ0-DQ15  
CE#  
: VCC  
: GND  
: Address  
: Data I/O  
: Chip enable  
: Output enable  
WE#  
WP#  
RP#  
BYTE#  
RY/BY#  
: Write enable  
: Write protect  
: Reset power down  
: Byte enable  
: Ready/Busy  
OE#  
NC  
: Non Connection  
Rev.1.0_48a_bezz  
1
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与M5M29KB/T331AVP相关器件

型号 品牌 获取价格 描述 数据表
M5M29KB331ATP RENESAS

获取价格

 		2MX16 FLASH 3.3V PROM, 70ns, PDSO52, 0.350 INCH, 0.40 MM PITCH, LEAD FREE, PLASTIC, TSOP2-
M5M29KB331AVP RENESAS

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 		IC,EEPROM,NOR FLASH,2MX16/4MX8,CMOS,TSSOP,48PIN,PLASTIC
M5M29KB641ATP RENESAS

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 		4MX16 FLASH 3.3V PROM, 70ns, PDSO52, 0.350 INCH, 0.40 MM PITCH, LEAD FREE, PLASTIC, TSOP2-
M5M29KB641AVP RENESAS

获取价格

 		4MX16 FLASH 3.3V PROM, 70ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-
M5M29KB800AVP-10 MITSUBISHI

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 		Flash, 512KX16, 100ns, PDSO48
M5M29KB800AVP-10I MITSUBISHI

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 		Flash, 512KX16, 100ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
M5M29KB800AVP-70 MITSUBISHI

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 		Flash, 512KX16, 70ns, PDSO48
M5M29KB800AVP-70I MITSUBISHI

获取价格

 		Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
M5M29KB800AVP-80 MITSUBISHI

获取价格

 		Flash, 512KX16, 80ns, PDSO48
M5M29KB800AVP-80I MITSUBISHI

获取价格

 		Flash, 512KX16, 80ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48

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