品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | 光电二极管内存集成电路 | |
页数 | 文件大小 | 规格书 |
22页 | 1604K | |
描述 | ||
Flash, 512KX16, 80ns, PDSO48 |
是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | TSSOP, TSSOP48,.8,20 | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 最长访问时间: | 80 ns |
备用内存宽度: | 8 | 启动块: | TOP |
命令用户界面: | YES | 数据轮询: | NO |
JESD-30 代码: | R-PDSO-G48 | JESD-609代码: | e0 |
内存密度: | 8388608 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 部门数/规模: | 1,6,15 |
端子数量: | 48 | 字数: | 524288 words |
字数代码: | 512000 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 512KX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSSOP |
封装等效代码: | TSSOP48,.8,20 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 页面大小: | 128/256 words |
并行/串行: | PARALLEL | 电源: | 5 V |
认证状态: | Not Qualified | 就绪/忙碌: | YES |
部门规模: | 16K,8K,64K | 最大待机电流: | 0.0001 A |
子类别: | Flash Memories | 最大压摆率: | 0.04 mA |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | DUAL |
切换位: | NO | 类型: | NOR TYPE |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
M5M29VB320VP | RENESAS | 33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK E |
获取价格 |
|
M5M29VT320VP | RENESAS | 33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK E |
获取价格 |
|
M5M29WB160BVP | MITSUBISHI | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERA |
获取价格 |
|
M5M29WB160BWG | MITSUBISHI | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERA |
获取价格 |
|
M5M29WB161BVP | MITSUBISHI | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERA |
获取价格 |
|
M5M29WB161BWG | MITSUBISHI | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERA |
获取价格 |