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M5M29KB800AVP-10I PDF预览

M5M29KB800AVP-10I

更新时间： 2024-11-26 05:41:55
品牌 Logo 应用领域
三菱 - MITSUBISHI 光电二极管内存集成电路
页数 文件大小 规格书
22页 236K
描述
Flash, 512KX16, 100ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48

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M5M29KB800AVP-10I 技术参数

生命周期：Obsolete零件包装代码：TSOP1
包装说明：12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48针数：48
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.84
最长访问时间：100 ns备用内存宽度：8
启动块：BOTTOMJESD-30 代码：R-PDSO-G48
长度：18.4 mm内存密度：8388608 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1端子数量：48
字数：524288 words字数代码：512000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：512KX16
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL编程电压：5 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL类型：NOR TYPE
宽度：12 mm

M5M29KB800AVP-10I 数据手册

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MITSUBISHI LSIs  
M5M29KB/T800AVP
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)  
CMOS 5.0V-ONLY, BLOCK ERASE FLASH MEMORY  
DESCRIPTION  
The MITSUBISHI Mobile FLASH M5M29KB/T800AVP is 5.0V-only high speed 8,388,608-bit CMOS boot block Flash Memories with  
alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in  
one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for  
mobile and personal computing, and communication products. The M5M29KB/T800AVP is fabricated by CMOS technology for the  
peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 48pin TSOP(I) .  
FEATURES  
Organization  
.................................  
.................................  
524,288 word x 16bit  
1,048,576 word x 8 bit  
VCC = 4.5~5.5V  
Boot Block  
M5M29KB800AVP  
M5M29KT800AVP  
...........................  
...........................  
Bottom Boot  
Top Boot  
.............................  
Supply voltage ................................  
Other Functions  
..............................  
..............................  
Access time  
-80  
80ns  
Soft Ware Command Control  
Selective Block Lock  
-1I 100ns  
Erase Suspend/Resume  
Program Suspend/Resume  
Status Register Read  
Alternating Back Ground Program/Erase Operation  
Between Bank(I) and Bank(II)  
Power Dissipation  
Read  
..............................  
110 mW (Max. at 5MHz)  
0.25mW (typ.)  
..........  
.................................  
.................................  
(After Automatic Power saving)  
Program/Erase  
Standby  
220 mW (Max.)  
0.25mW (typ.)  
.......................  
Package  
Deep power down mode  
Auto program for Bank(I)  
0.25mW (typ.)  
48-Lead, 12mm x 20mm TSOP (type-I)  
.................................  
Program Time  
Program Unit  
4ms (typ.)  
.........................  
.........................  
(Byte Program)  
1word/1byte  
(Page Program)  
128word/256byte  
APPLICATION  
Auto program for Bank(II)  
Code Storage PC BIOS  
.................................  
Program Time  
Program Unit  
Auto Erase  
Erase time  
4ms (typ.)  
Digital Cellular Phone/Telecommunication  
.................................  
128word/256byte  
.................................  
40 ms (typ.)  
Erase Unit  
.....................  
..............  
Parameter Block  
......................  
Bank(I) Boot Block  
8Kword/16Kbyte x 1  
4Kword/8Kbyte x 6  
32Kword/64Kbyte x 15  
Bank(II) Main Block  
.........................................  
Program/Erase cycles  
100Kcycles  
PIN CONFIGURATION (TOP VIEW)  
800AVP  
800AVP  
1
2
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
A16  
A15  
A14  
BYTE#  
GND  
DQ15/A-1  
DQ7  
3
A13  
4
A12  
5
A11  
6
DQ14  
DQ6  
A10  
7
A9  
8
DQ13  
DQ5  
A8  
9
NC  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
DQ12  
DQ4  
NC  
WE#  
RP#  
NC  
VCC  
M5M29KB/T  
800AVP  
DQ11  
DQ3  
WP1#  
RY/BY#  
DQ10  
DQ2  
A18  
A17  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
DQ9  
DQ1  
DQ8  
DQ0  
OE#  
GND  
CE#  
A0  
Outline 48pin TSOP type-I (12 X 20mm)  
VP(Normal bend): 48P3E-B  
NC : NO CONNECTION  
June 1998 , Rev.3.1  
1
1234567...22

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与M5M29KB800AVP-10I相关器件

型号 品牌 获取价格 描述 数据表
M5M29KB800AVP-70 MITSUBISHI

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 		Flash, 512KX16, 70ns, PDSO48
M5M29KB800AVP-70I MITSUBISHI

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 		Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
M5M29KB800AVP-80 MITSUBISHI

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 		Flash, 512KX16, 80ns, PDSO48
M5M29KB800AVP-80I MITSUBISHI

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 		Flash, 512KX16, 80ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
M5M29KB800AVP-8I MITSUBISHI

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 		Flash, 512KX16, 80ns, PDSO48
M5M29KE131BTP RENESAS

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 		134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY
M5M29KE131BVP RENESAS

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 		134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY St
M5M29KT331AVP RENESAS

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 		2MX16 FLASH 3.3V PROM, 70ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-
M5M29KT641ATP RENESAS

获取价格

 		4MX16 FLASH 3.3V PROM, 70ns, PDSO52, 0.350 INCH, 0.40 MM PITCH, LEAD FREE, PLASTIC, TSOP2-
M5M29KT800AVP-10I MITSUBISHI

获取价格

 		Flash, 512KX16, 100ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48

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