MITSUBISHI LSIs
M5M29MG5BM2/T9G0B0/8T0/8080/810A1AWWGG
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
DESCRIPTION
The MITSUBISHI Mobile FLASH M5M29GB/T008/801AWG are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories with
alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in
one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for
mobile and personal computing, and communication products. The M5M29GB/T008/801AWG are fabricated by CMOS technology for the
peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 6x8-balls CSP (0.75mm ball
pitch) .
FEATURES
Boot Block
........................
........................
.................................
.................................
Organization
524,288 word x 16bit
(M5M29GB/T801AWG)
M5M29GB008/801AWG
M5M29GT008/801AWG
Bottom Boot
Top Boot
1,048,576 word x 8 bit
(M5M29GB/T008AWG)
VCC = 2.7~3.6V
Other Functions
Soft Ware Command Control
Selective Block Lock
.............................
Supply voltage ................................
Erase Suspend/Resume
Program Suspend/Resume
Status Register Read
..............................
Access time
-8I
80ns : Vcc=3.0V
100ns : Vcc=2.7V
Power Dissipation
Read
Alternating Back Ground Program/Erase Operation
Between Bank(I) and Bank(II)
.................................
72 mW (Max. at 5MHz)
0.33µW (typ.)
..........
(After Automatic Power saving)
.................................
Program/Erase
Standby
144 mW (Max.)
0.33µW (typ.)
0.33µW (typ.)
Package
7mm x 8.5mm CSP (Chip Scale Package)
6 x 8 balls, 0.75mm ball pitch
.................................
.......................
Deep power down mode
Auto program for Bank(I)
-
.................................
Program Time
Program Unit
4ms (typ.)
.........................
.........................
(Byte Program)
(Page Program)
1word/1byte
128word/256byte
APPLICATION
Code Storage PC BIOS
Digital Cellular Phone/Telecommunication
Auto program for Bank(II)
.................................
.................................
Program Time
Program Unit
Auto Erase
Erase time
4ms (typ.)
128word/256byte
.................................
40 ms (typ.)
Erase Unit
.....................
Bank(I) Boot Block
Parameter Block
Bank(II) Main Block
8Kword/16Kbyte x 1
4Kword/8Kbyte x 6
32Kword/64Kbyte x 15
..............
......................
.........................................
Program/Erase cycles
100Kcycles
PIN CONFIGURATION (TOP VIEW)
8.5mm
8.5mm
A13
A14
A15
A11
A10
A8
WP2# WP1#
NC
A7
A5
A4
A2
A8
WE#
A9
A4
A2
A12
A10
WP2#
RP#
NC
NC
A7
A5
A14
A15
A16
WP1#
A19
6
5
4
6
5
4
A18
NC
A17
A18
WE#
A9
RP#
NC
A6
A3
A3
A12
D14
A1
NC
D2
A6
A1
A0
A13
NC
D5
NC
D11
A0
CE#
A16
NC
D5
D6
D2
D3
D8
D9
A17
NC
CE#
3
3
GND
OE#
NC
NC
GND
OE#
D3
D0
D1
D12
D4
NC
D6
NC
D4
D0
D1
D15
D7
A11
D7
2
1
2
1
D10
GND
VCC
GND
D13
VCC
NC
A
B
C
D
E
F
G H
A
B
C
D
E
F
G H
INDEX
INDEX
M5M29GB/T008AWG
M5M29GB/T801AWG
CSP(0.75mm ball pitch):48FHA
CSP(0.75mm ball pitch):48FHA
8-bit version
NC : NO CONNECTION
16-bit version
June 1998 , Rev.3.1
1