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M5M29GB008AWG-8I

更新时间： 2024-11-07 18:58:35
品牌 Logo 应用领域
三菱 - MITSUBISHI 内存集成电路
页数 文件大小 规格书
23页 242K
描述
Flash, 1MX8, 100ns, PBGA48, 7 X 8.50 MM, 0.75 MM PITCH, CSP-48

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M5M29GB008AWG-8I 技术参数

生命周期：Obsolete零件包装代码：BGA
包装说明：7 X 8.50 MM, 0.75 MM PITCH, CSP-48针数：48
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.84
最长访问时间：100 ns启动块：BOTTOM
JESD-30 代码：R-PBGA-B48长度：8.5 mm
内存密度：8388608 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
端子数量：48字数：1048576 words
字数代码：1000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：1MX8封装主体材料：PLASTIC/EPOXY
封装代码：TFBGA封装形状：RECTANGULAR
封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行：PARALLEL
编程电压：3.3 V认证状态：Not Qualified
座面最大高度：1.06 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：BALL
端子节距：0.75 mm端子位置：BOTTOM
类型：NOR TYPE宽度：7 mm
Base Number Matches：1

M5M29GB008AWG-8I 数据手册

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MITSUBISHI LSIs  
M5M29GB/T008/801AWG
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)  
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY  
DESCRIPTION  
The MITSUBISHI Mobile FLASH M5M29GB/T008/801AWG are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories with  
alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in  
one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for  
mobile and personal computing, and communication products. The M5M29GB/T008/801AWG are fabricated by CMOS technology for the  
peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 6x8-balls CSP (0.75mm ball  
pitch) .  
FEATURES  
Boot Block  
........................  
........................  
.................................  
.................................  
Organization  
524,288 word x 16bit  
(M5M29GB/T801AWG)  
M5M29GB008/801AWG  
M5M29GT008/801AWG  
Bottom Boot  
Top Boot  
1,048,576 word x 8 bit  
(M5M29GB/T008AWG)  
VCC = 2.7~3.6V  
Other Functions  
Soft Ware Command Control  
Selective Block Lock  
.............................  
Supply voltage ................................  
Erase Suspend/Resume  
Program Suspend/Resume  
Status Register Read  
..............................  
Access time  
-8I  
80ns : Vcc=3.0V  
100ns : Vcc=2.7V  
Power Dissipation  
Read  
Alternating Back Ground Program/Erase Operation  
Between Bank(I) and Bank(II)  
.................................  
72 mW (Max. at 5MHz)  
0.33µW (typ.)  
..........  
(After Automatic Power saving)  
.................................  
Program/Erase  
Standby  
144 mW (Max.)  
0.33µW (typ.)  
0.33µW (typ.)  
Package  
7mm x 8.5mm CSP (Chip Scale Package)  
6 x 8 balls, 0.75mm ball pitch  
.................................  
.......................  
Deep power down mode  
Auto program for Bank(I)  
-
.................................  
Program Time  
Program Unit  
4ms (typ.)  
.........................  
.........................  
(Byte Program)  
(Page Program)  
1word/1byte  
128word/256byte  
APPLICATION  
Code Storage PC BIOS  
Digital Cellular Phone/Telecommunication  
Auto program for Bank(II)  
.................................  
.................................  
Program Time  
Program Unit  
Auto Erase  
Erase time  
4ms (typ.)  
128word/256byte  
.................................  
40 ms (typ.)  
Erase Unit  
.....................  
Bank(I) Boot Block  
Parameter Block  
Bank(II) Main Block  
8Kword/16Kbyte x 1  
4Kword/8Kbyte x 6  
32Kword/64Kbyte x 15  
..............  
......................  
.........................................  
Program/Erase cycles  
100Kcycles  
PIN CONFIGURATION (TOP VIEW)  
8.5mm  
8.5mm  
A13  
A14  
A15  
A11  
A10  
A8  
WP2# WP1#  
NC  
A7  
A5  
A4  
A2  
A8  
WE#  
A9  
A4  
A2  
A12  
A10  
WP2#  
RP#  
NC  
NC  
A7  
A5  
A14  
A15  
A16  
WP1#  
A19  
6
5
4
6
5
4
A18  
NC  
A17  
A18  
WE#  
A9  
RP#  
NC  
A6  
A3  
A3  
A12  
D14  
A1  
NC  
D2  
A6  
A1  
A0  
A13  
NC  
D5  
NC  
D11  
A0  
CE#  
A16  
NC  
D5  
D6  
D2  
D3  
D8  
D9  
A17  
NC  
CE#  
3
3
GND  
OE#  
NC  
NC  
GND  
OE#  
D3  
D0  
D1  
D12  
D4  
NC  
D6  
NC  
D4  
D0  
D1  
D15  
D7  
A11  
D7  
2
1
2
1
D10  
GND  
VCC  
GND  
D13  
VCC  
NC  
A
B
C
D
E
F
G H  
A
B
C
D
E
F
G H  
INDEX  
INDEX  
M5M29GB/T008AWG  
M5M29GB/T801AWG  
CSP(0.75mm ball pitch):48FHA  
CSP(0.75mm ball pitch):48FHA  
8-bit version  
NC : NO CONNECTION  
16-bit version  
June 1998 , Rev.3.1  
1
1234567...23

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M5M29GB160BVP-80 MITSUBISHI

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 		16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERAS
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M5M29GB160BWG MITSUBISHI

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M5M29GB161BVP MITSUBISHI

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M5M29GB161BWG MITSUBISHI

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 		16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB320VP RENESAS

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 		33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK E
M5M29GB320VP-80 RENESAS

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 		33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK E
M5M29GB320WG RENESAS

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 		33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK E
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