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M5M29GB320VP-80 PDF预览

M5M29GB320VP-80

更新时间： 2024-09-17 02:52:55
品牌 Logo 应用领域
瑞萨 - RENESAS 闪存
页数 文件大小 规格书
3页 72K
描述
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

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M5M29GB320VP-80 数据手册

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Renesas LSIs  
M5M29GB/T320VP-80  
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT)  
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY  
DESCRIPTION  
The Mobile FLASH M5M29GB/T320VP are 3.3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with alternating BGO  
(Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while  
the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for mobile and personal  
computing, and communication products. The M5M29GB/T320VP are fabricated by CMOS technology for the peripheral circuits and  
DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 48pin TSOP(I) .  
FEATURES  
Boot Block  
........................  
........................  
.................................  
.................................  
Organization  
2,097,152 word x 16bit  
4,194,304 word x 8 bit  
VCC = 2.7 ~ 3.6V  
M5M29GB320VP  
M5M29GT320VP  
Bottom Boot  
Top Boot  
Other Functions  
Supply voltage ................................  
..............................  
Soft Ware Command Control  
Selective Block Lock  
Access time  
80ns (Vcc=3.0~3.6V)  
90ns (Vcc=2.7~3.6V)  
Status Register Read  
Alternating Back Ground Program/Erase Operation  
Between Bank(I) ,Bank(II),Bank(III) and Bank(IV)  
..............................  
Power Dissipation  
.................................  
..........  
.................................  
.................................  
.......................  
Read  
72 mW (Max. at 5MHz)  
0.33µW (typ.)  
126mW (Max.)  
0.33µW (typ.)  
(After Automatic Power saving)  
Program/Erase  
Standby  
Package  
48-Lead, 12mm x 20mm TSOP (type-I)  
Deep power down mode  
0.33µW (typ.)  
Auto program for Bank(I) and Bank(II)  
.................................  
Program Time  
Program Unit  
(Byte Program)  
(Page Program)  
Auto program for Bank(III) and Bank(IV)  
4ms (typ.)  
.........................  
1word/1byte  
128word/256byte  
.........................  
.................................  
.................................  
Program Time  
Program Unit  
Auto Erase  
Erase time  
4ms (typ.)  
128word/256byte  
APPLICATION  
Code Strage  
.................................  
.....................  
Digital Cellular Phone  
Telecommunication  
Mobile Computing Machine  
PDA (Personal Digital Assistance)  
Car Navigation System  
Video Game Machine  
40 ms (typ.)  
Erase Unit  
Bank(I) Boot Block  
4Kword/8Kbyte x 2  
4Kword/8Kbyte x 6  
32Kword/64Kbyte x 7  
32Kword/64Kbyte x 8  
32Kword/64Kbyte x 24  
32Kword/64Kbyte x 24  
..............  
Parameter Block  
Main Block  
Bank(II) Main Block  
Bank(III) Main Block  
Bank(IV) Main Block  
......................  
......................  
......................  
......................  
.........................................  
Program/Erase cycles  
100Kcycles  
PIN CONFIGURATION (TOP VIEW)  
320VP  
320VP  
1
2
48  
A16  
A15  
A14  
A13  
A12  
A11  
A10  
A9  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
BYTE#  
GND  
DQ15/A-1  
DQ7  
DQ14  
DQ6  
DQ13  
DQ5  
DQ12  
DQ4  
VCC  
3
4
5
6
7
8
A8  
9
A19  
A20  
WE#  
RP#  
NC  
10  
11  
12  
M5M29GB/T  
320VP  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
DQ11  
DQ3  
DQ10  
DQ2  
DQ9  
DQ1  
DQ8  
DQ0  
OE#  
GND  
CE#  
A0  
WP#  
RY/BY#  
A18  
A17  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
NC : NO CONNECTION  
Outline 48pin TSOP type-I (12 X 20mm)  
VP(Normal bend)  
48P3E-C  
Rev3.0_48a_bazz  
1
123

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