Datasheet > M5M29GB640C3BTI-12

M5M29GB640C3BTI-12

更新时间： 2024-09-16 21:55:47

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
42页	590K
描述
3.3V ONLY FLASHMEMORY

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M5M29GB640VP

FEATURES

67,108,864-BIT(8,388,608 - WORDBY 8-BIT/ 4,194,304 - WORD BY16-BIT)

3.3VONLYFLASHMEMORY

FEATURES

• Automatic Suspend Enhance

- Word/byte write suspend to read

- Sector erase suspend to word/byte write

- Sector erase suspend to read register report

• Automaticsectorerase,fullchiperase,wordwriteand

sector lock/unlock configuration

• Status Reply

• Singlepowersupplyoperation

- 3.0V only operation for read, erase and program

operation

- VCC=VPP=2.7~3.6V

-VCC=12fastproductionprogramming

- 1.65V~2.5V or 2.7V~3.6V I/O Option (VCCQ)

-Operatingtemperature:-40°C~85°C

• Fast access time : 90/120ns

• Lowpowerconsumption

- Detection of program and erase operation comple-

tion.

- Command User Interface (CUI)

- Status Register (SR)

-9mAmaximumactivereadcurrent, f=5MHz(CMOS

input)

• Data Protection Performance

-Includebootsectorsandparameterandmainsectors

to be block/unblock

- 21mA program erase current maximum

(VPP=1.65~3.6V)

- 7uA typical standby current under power saving

mode

• 100,000minimumerase/programcycles

• Common Flash Interface (CFI)

• Sectorarchitecture

•

64-bitProtectionRegister

- Sector Erase (Sector structure : 4Kword x 2 (boot

sectors), 4Kword x 6 (parameter sectors), 32Kword x

7(parametersectors)

Latch-up protected to 100mA from -1V to VCC+1V

- Top Boot

• Package type:

• Auto Erase (chip & sector) and Auto Program

- Automatically program and verify data at specified

address

- 48-pin TSOP (12mm x 20mm)

A15

A14

A13

A12

A11

A10

A16

VCCQ

GND

Q15

Q14

Q13

A21

A20

A19

A18

A17

Q12

M5M29GB640VP

VCC

Q11

Q10

GND

12 3 4 5 6 7...42

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