M5M29GB640VP
FEATURES
67,108,864-BIT(8,388,608 - WORDBY 8-BIT/ 4,194,304 - WORD BY16-BIT)
3.3VONLYFLASHMEMORY
FEATURES
• Automatic Suspend Enhance
- Word/byte write suspend to read
- Sector erase suspend to word/byte write
- Sector erase suspend to read register report
• Automaticsectorerase,fullchiperase,wordwriteand
sector lock/unlock configuration
• Status Reply
• Singlepowersupplyoperation
- 3.0V only operation for read, erase and program
operation
- VCC=VPP=2.7~3.6V
-VCC=12fastproductionprogramming
- 1.65V~2.5V or 2.7V~3.6V I/O Option (VCCQ)
-Operatingtemperature:-40°C~85°C
• Fast access time : 90/120ns
• Lowpowerconsumption
- Detection of program and erase operation comple-
tion.
- Command User Interface (CUI)
- Status Register (SR)
-9mAmaximumactivereadcurrent, f=5MHz(CMOS
input)
• Data Protection Performance
-Includebootsectorsandparameterandmainsectors
to be block/unblock
- 21mA program erase current maximum
(VPP=1.65~3.6V)
- 7uA typical standby current under power saving
mode
• 100,000minimumerase/programcycles
• Common Flash Interface (CFI)
• Sectorarchitecture
•
64-bitProtectionRegister
- Sector Erase (Sector structure : 4Kword x 2 (boot
sectors), 4Kword x 6 (parameter sectors), 32Kword x
7(parametersectors)
Latch-up protected to 100mA from -1V to VCC+1V
- Top Boot
• Package type:
• Auto Erase (chip & sector) and Auto Program
- Automatically program and verify data at specified
address
- 48-pin TSOP (12mm x 20mm)
A15
A14
A13
A12
A11
A10
A9
1
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
VCCQ
GND
Q15
Q7
2
3
4
5
6
Q14
Q6
7
A8
8
Q13
Q5
A21
A20
WE
RP
NC
WP
A19
A18
A17
A7
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Q12
Q4
M5M29GB640VP
VCC
Q11
Q3
Q10
Q2
Q9
Q1
A6
Q8
A5
Q0
A4
OE
A3
GND
CE
1
A2
A1
A0
1