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M5M29GB161BWG PDF预览

M5M29GB161BWG

更新时间： 2024-11-20 22:09:31
品牌 Logo 应用领域
三菱 - MITSUBISHI 闪存内存集成电路
页数 文件大小 规格书
23页 201K
描述
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

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中文翻译

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M5M29GB161BWG 技术参数

生命周期：Obsolete零件包装代码：BGA
包装说明：TFBGA,针数：48
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.84
Is Samacsys：N最长访问时间：90 ns
其他特性：100K ERASE/PROGRAM CYCLESJESD-30 代码：R-PBGA-B48
长度：8.5 mm内存密度：16777216 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1端子数量：48
字数：1048576 words字数代码：1000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：1MX16
封装主体材料：PLASTIC/EPOXY封装代码：TFBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行：PARALLEL编程电压：3.3 V
认证状态：Not Qualified座面最大高度：1.06 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：BALL端子节距：0.75 mm
端子位置：BOTTOM宽度：7 mm
Base Number Matches：1

M5M29GB161BWG 数据手册

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MITSUBISHI LSIs  
M5M29GB/T161BWG  
16,777,216-BIT (1048,576-WORD BY16-BIT)  
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY  
DESCRIPTION  
The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with  
alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in  
one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for  
mobile and personal computing, and communication products. The M5M29GB/T161BWG are fabricated by CMOS technology for the  
peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 6x8-balls CSP (0.75mm ball  
pitch) .  
FEATURES  
Boot Block  
.................................  
Organization  
1048,576 word x 16bit  
(M5M29GB/T161BWG)  
........................  
........................  
M5M29GB161BWG  
M5M29GT161BWG  
Bottom Boot  
Top Boot  
.............................  
Supply voltage ................................  
VCC = 2.7~3.6V  
90ns (Max.)  
Other Functions  
Soft Ware Command Control  
Selective Block Lock  
..............................  
Access time  
Erase Suspend/Resume  
Program Suspend/Resume  
Status Register Read  
Alternating Back Ground Program/Erase Operation  
Between Bank(I) and Bank(II)  
Power Dissipation  
Read  
.................................  
..........  
54 mW (Max. at 5MHz)  
0.33µW (typ.)  
(After Automatic Power saving)  
Program/Erase  
Standby  
.......................  
.................................  
.......................  
126 mW (Max.)  
0.33µW (typ.)  
0.33µW (typ.)  
Deep power down mode  
Auto program for Bank(I)  
Program Time  
Program Unit  
Package  
7mm x 8.5mm CSP (Chip Scale Package)  
6 x 8 balls, 0.75mm ball pitch  
.................................  
4ms (typ.)  
-
.........................  
.........................  
(Byte Program)  
(Page Program)  
1word  
128word  
Auto program for Bank(II)  
.................................  
.................................  
APPLICATION  
Digital Cellular Phone  
Telecommunication  
Mobile Computing Machine  
PDA (Personal Digital Assistance)  
Car Navigation System  
Video Game Machine  
Program Time  
Program Unit  
Auto Erase  
Erase time  
4ms (typ.)  
128word  
.................................  
.....................  
40 ms (typ.)  
Erase Unit  
Bank(I) Boot Block  
16Kword x 1  
16Kword x 7  
32Kword x 28  
..............  
......................  
Parameter Block  
Bank(II) Main Block  
.........................................  
Program/Erase cycles  
100Kcycles  
PIN CONFIGURATION (TOP VIEW)  
8.5mm  
A19  
A17  
A6  
A13  
A14  
A15  
A11  
A10  
A8  
WP2# WP1#  
A7  
A5  
A4  
A2  
6
5
4
A18  
NC  
WE# RP#  
A3  
A12  
D14  
A9  
NC  
A1  
A0  
D11  
CE#  
A16  
NC  
D5  
D6  
D2  
D3  
D8  
D9  
3
GND  
OE#  
D0  
D1  
D12  
D4  
D15  
D7  
2
1
D10  
GND  
D13  
VCC  
A
B
C
D
E
F
G
H
INDEX  
M5M29GB/T161BWG  
CSP(0.75mm ball pitch):48FJA  
NC : NO CONNECTION  
16-bit version  
Sep.1999. Rev4.0  
1
1234567...23

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