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M5M29GB160BVP PDF预览

M5M29GB160BVP

更新时间： 2024-11-08 22:11:23
品牌 Logo 应用领域
三菱 - MITSUBISHI 闪存
页数 文件大小 规格书
25页 230K
描述
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

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中文翻译

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M5M29GB160BVP 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：TSSOP, TSSOP48,.8,20Reach Compliance Code：unknown
风险等级：5.92最长访问时间：90 ns
备用内存宽度：8启动块：BOTTOM
命令用户界面：YES数据轮询：NO
JESD-30 代码：R-PDSO-G48JESD-609代码：e0
内存密度：16777216 bit内存集成电路类型：FLASH
内存宽度：16部门数/规模：8,28
端子数量：48字数：1048576 words
字数代码：1000000最高工作温度：85 °C
最低工作温度：-40 °C组织：1MX16
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装等效代码：TSSOP48,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH页面大小：128/256 words
并行/串行：PARALLEL电源：3/3.3 V
认证状态：Not Qualified就绪/忙碌：YES
部门规模：32K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.035 mA
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL切换位：NO
类型：NOR TYPEBase Number Matches：1

M5M29GB160BVP 数据手册

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MITSUBISHI LSIs  
M5M29GB/T160BVP-80  
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)  
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY  
DESCRIPTION  
The MITSUBISHI Mobile FLASH M5M29GB/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with  
alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in  
one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for  
mobile and personal computing, and communication products. The M5M29GB/T160BVP are fabricated by CMOS technology for the  
peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in in 48pin TSOP(I) .  
FEATURES  
Boot Block  
........................  
........................  
.................................  
.................................  
Organization  
1048,576 word x 16bit  
2,097,152 word x 8 bit  
VCC = 2.7~3.6V  
M5M29GB160BVP  
M5M29GT160BVP  
Bottom Boot  
Top Boot  
Other Functions  
.............................  
Supply voltage ................................  
Soft Ware Command Control  
Selective Block Lock  
Erase Suspend/Resume  
Program Suspend/Resume  
Status Register Read  
..............................  
Access time  
80ns (Vcc=3.3V+/-0.3V)  
90ns (Vcc=2.7~3.6V)  
Power Dissipation  
Alternating Back Ground Program/Erase Operation  
Between Bank(I) and Bank(II)  
.................................  
Read  
54 mW (Max. at 5MHz)  
0.33mW (typ.)  
..........  
(After Automatic Power saving)  
.................................  
Program/Erase  
126 mW (Max.)  
0.33mW (typ.)  
Package  
.................................  
Standby  
48-Lead, 12mm x 20mm TSOP (type-I)  
.......................  
Deep power down mode  
0.33mW (typ.)  
Auto program for Bank(I)  
.................................  
Program Time  
4ms (typ.)  
Program Unit  
.........................  
(Byte Program)  
(Page Program)  
1word/1byte  
128word/256byte  
APPLICATION  
Code Strage  
Digital Cellular Phone  
Telecommunication  
.........................  
Auto program for Bank(II)  
.................................  
Program Time  
4ms (typ.)  
128word/256byte  
.................................  
Program Unit  
Mobile Computing Machine  
PDA (Personal Digital Assistance)  
Car Navigation System  
Video Game Machine  
Auto Erase  
Erase time  
Erase Unit  
.................................  
40 ms (typ.)  
.....................  
Bank(I) Boot Block  
16Kword/32Kbyte x 1  
16Kword/32Kbyte x 7  
32Kword/64Kbyte x 28  
..............  
......................  
Parameter Block  
Bank(II) Main Block  
.........................................  
Program/Erase cycles  
100Kcycles  
PIN CONFIGURATION (TOP VIEW)  
160BVP  
160BVP  
1
48  
A16  
A15  
A14  
A13  
A12  
A11  
A10  
A9  
2
3
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
BYTE#  
GND  
DQ15/A-1  
DQ7  
DQ14  
DQ6  
DQ13  
DQ5  
DQ12  
DQ4  
VCC  
4
5
6
7
8
A8  
9
A19  
NC  
WE#  
RP#  
NC  
WP#  
RY/BY#  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
M5M29GB/T  
160BVP  
DQ11  
DQ3  
DQ10  
DQ2  
DQ9  
DQ1  
DQ8  
DQ0  
OE#  
GND  
CE#  
A0  
A18  
A17  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
Outline 48pin TSOP type-I (12 X 20mm)  
VP(Normal bend)  
NC : NO CONNECTION  
Sep 1999. Rev2.0  
1
1234567...25

中文翻译

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与M5M29GB160BVP相关器件

型号 品牌 获取价格 描述 数据表
M5M29GB160BVP-80 MITSUBISHI

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 		16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERAS
M5M29GB160BVP-90 MITSUBISHI

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 		Flash, 2MX8, 90ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
M5M29GB160BWG MITSUBISHI

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 		16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERA
M5M29GB161BVP MITSUBISHI

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 		16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERA
M5M29GB161BWG MITSUBISHI

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 		16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB320VP RENESAS

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 		33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK E
M5M29GB320VP-80 RENESAS

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 		33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK E
M5M29GB320WG RENESAS

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 		33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK E
M5M29GB640C3BTC-12 ETC

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 		3.3V ONLY FLASHMEMORY
M5M29GB640C3BTC-90 ETC

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 		3.3V ONLY FLASHMEMORY

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