5秒后页面跳转
M59MR032CZC PDF预览

M59MR032CZC

更新时间: 2024-09-24 22:26:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
49页 352K
描述
32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

M59MR032CZC 数据手册

 浏览型号M59MR032CZC的Datasheet PDF文件第2页浏览型号M59MR032CZC的Datasheet PDF文件第3页浏览型号M59MR032CZC的Datasheet PDF文件第4页浏览型号M59MR032CZC的Datasheet PDF文件第5页浏览型号M59MR032CZC的Datasheet PDF文件第6页浏览型号M59MR032CZC的Datasheet PDF文件第7页 
M59MR032C  
M59MR032D  
32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst)  
1.8V Supply Flash Memory  
SUPPLY VOLTAGE  
– V = V = 1.65V to 2.0V for Program,  
DD  
DDQ  
Erase and Read  
– V = 12V for fast Program (optional)  
PP  
MULTIPLEXED ADDRESS/DATA  
SYNCHRONOUS / ASYNCHRONOUS READ  
– Configurable Burst mode Read  
– Page mode Read (4 Words Page)  
– Random Access: 100ns  
BGA  
µBGA  
µBGA46 (GC)  
10 x 4 ball array  
LFBGA54 (ZC)  
10 x 4 ball array  
PROGRAMMING TIME  
– 10µs by Word typical  
– Double Word Programming Option  
MEMORY BLOCKS  
– Dual Bank Memory Array: 8 Mbit - 24 Mbit  
– Parameter Blocks (Top or Bottom location)  
DUAL BANK OPERATIONS  
Figure 1. Logic Diagram  
– Read within one Bank while Program or  
Erase within the other  
V
V
V
DD DDQ PP  
– No delay between Read and Write operations  
BLOCK PROTECTION/UNPROTECTION  
– All Blocks protected at Power-up  
5
16  
A16-A20  
ADQ0-ADQ15  
– Any combination of Blocks can be protected  
COMMON FLASH INTERFACE (CFI)  
64 bit SECURITY CODE  
W
E
WAIT  
BINV  
M59MR032C  
M59MR032D  
G
ERASE SUSPEND and RESUME MODES  
RP  
WP  
L
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
K
– Top Device Code, M59MR032C: A4h  
– Bottom Device Code, M59MR032D: A5h  
V
SS  
AI90109  
April 2001  
1/49  

与M59MR032CZC相关器件

型号 品牌 获取价格 描述 数据表
M59MR032D STMICROELECTRONICS

获取价格

32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M59MR032D100GC6 STMICROELECTRONICS

获取价格

2MX16 FLASH 1.8V PROM, 14ns, PBGA46, 0.50 MM PITCH, MICRO, BGA-46
M59MR032D100GC6 NUMONYX

获取价格

2MX16 FLASH 1.8V PROM, 14ns, PBGA46, 0.50 MM PITCH, MICRO, BGA-46
M59MR032D100GC6T STMICROELECTRONICS

获取价格

32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M59MR032D100GC6T NUMONYX

获取价格

Flash, 2MX16, 14ns, PBGA46, 0.50 MM PITCH, MICRO, BGA-46
M59MR032D100ZC6 STMICROELECTRONICS

获取价格

暂无描述
M59MR032D100ZC6T NUMONYX

获取价格

Flash, 2MX16, 14ns, PBGA54, 0.50 MM PITCH, LFBGA-54
M59MR032D100ZC6T STMICROELECTRONICS

获取价格

32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M59MR032D120GC6 STMICROELECTRONICS

获取价格

暂无描述
M59MR032D120GC6 NUMONYX

获取价格

Flash, 2MX16, 18ns, PBGA46, 0.50 MM PITCH, MICRO, BGA-46