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M59PW032100N1T PDF预览

M59PW032100N1T

更新时间: 2024-11-14 05:18:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管
页数 文件大小 规格书
23页 547K
描述
2MX16 FLASH 3V PROM, 100ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

M59PW032100N1T 数据手册

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M59PW032  
32 Mbit (2Mb x16, Uniform Block)  
3V Supply LightFlash™ Memory  
NOT FOR NEW DESIGN  
FEATURES SUMMARY  
MASK-ROM PIN-OUT COMPATIBLE  
SUPPLY VOLTAGE  
Figure 1. Packages  
VCC = 2.7 to 3.6V for Read  
VPP = 11.4 to 12.6V for Program  
ACCESS TIME  
90ns at VCC = 3.0 to 3.6V  
100, 110ns at VCC = 2.7 to 3.6V  
SO44 (M)  
PROGRAMMING TIME  
9µs per Word typical  
Multiple Word Programming Option  
(4s typical Chip Program)  
SUITABLE FOR ON-BOARD  
PROGRAMMING  
ERASE TIME  
TSOP48 (N)  
12 x 20mm  
21s typical Chip Erase  
UNIFORM BLOCKS  
16 blocks of 2 Mbits  
PROGRAM/ERASE CONTROLLER  
Embedded Word Program algorithms  
10,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
Manufacturer Code: 0020h  
Device Code: 88AEh  
December 2005  
1/23  
This is information on a product still in production but not recommended for new designs.  

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