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M59PW1282100M1T PDF预览

M59PW1282100M1T

更新时间: 2024-11-12 22:26:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
24页 417K
描述
128Mbit (two 64Mb, x16, Uniform Block, LightFlash⑩) 3V Supply, Multiple Memory Product

M59PW1282100M1T 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC包装说明:0.500 INCH, PLASTIC, SO-44
针数:44Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.74Is Samacsys:N
最长访问时间:100 ns命令用户界面:NO
数据轮询:YESJESD-30 代码:R-PDSO-G44
JESD-609代码:e3长度:28.5 mm
内存密度:134217728 bit内存集成电路类型:FLASH MODULE
内存宽度:16功能数量:1
部门数/规模:64端子数量:44
字数:8388608 words字数代码:8000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:8MX16
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP44,.63封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
电源:3/3.3 V编程电压:12 V
认证状态:Not Qualified座面最大高度:3 mm
部门规模:128K最大待机电流:0.00015 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
切换位:YES类型:NOR TYPE
宽度:12.6 mmBase Number Matches:1

M59PW1282100M1T 数据手册

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M59PW1282  
128Mbit (two 64Mb, x16, Uniform Block, LightFlash™)  
3V Supply, Multiple Memory Product  
FEATURES SUMMARY  
MASK-ROM PIN-OUT COMPATIBLE  
Figure 1. Package  
TWO 64 Mbit LightFlash™ MEMORIES  
STACKED IN A SINGLE PACKAGE  
SUPPLY VOLTAGE  
– V = 2.7 to 3.6V for Read  
CC  
– V = 11.4 to 12.6V for Program and Erase  
PP  
ACCESS TIME  
– 90ns at V = 3.0 to 3.6V  
CC  
– 100, 120ns at V = 2.7 to 3.6V  
CC  
PROGRAMMING TIME  
– 9µs per Word typical  
SO44 (M)  
– Multiple Word Programming Option  
(16s typical Chip Program)  
ERASE TIME  
– 85s typical Chip Erase  
UNIFORM BLOCKS  
– 64 blocks of 2 Mbits  
PROGRAM/ERASE CONTROLLER  
– Embedded Word Program algorithms  
10,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Device Code : 88A8h  
November 2003  
1/24  

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