Datasheet > M59PW1282-120M1T

M59PW1282-120M1T

更新时间： 2024-11-12 22:26:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		存储
页数	文件大小	规格书
24页	417K
描述
128Mbit (two 64Mb, x16, Uniform Block, LightFlash⑩) 3V Supply, Multiple Memory Product

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M59PW1282-120M1T 数据手册

M59PW1282

128Mbit (two 64Mb, x16, Uniform Block, LightFlash™)

3V Supply, Multiple Memory Product

FEATURES SUMMARY

■ MASK-ROM PIN-OUT COMPATIBLE

Figure 1. Package

■ TWO 64 Mbit LightFlash™ MEMORIES

STACKED IN A SINGLE PACKAGE

■ SUPPLY VOLTAGE

– V = 2.7 to 3.6V for Read

– V = 11.4 to 12.6V for Program and Erase

■ ACCESS TIME

– 90ns at V = 3.0 to 3.6V

– 100, 120ns at V = 2.7 to 3.6V

■ PROGRAMMING TIME

– 9µs per Word typical

SO44 (M)

– Multiple Word Programming Option

(16s typical Chip Program)

■ ERASE TIME

– 85s typical Chip Erase

■ UNIFORM BLOCKS

– 64 blocks of 2 Mbits

■ PROGRAM/ERASE CONTROLLER

– Embedded Word Program algorithms

■ 10,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code : 88A8h

November 2003

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