Datasheet > M59MR032DGC

M59MR032DGC

更新时间： 2024-09-24 22:26:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
49页	352K
描述
32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

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数据手册

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M59MR032DGC 数据手册

M59MR032C

M59MR032D

32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst)

1.8V Supply Flash Memory

■ SUPPLY VOLTAGE

– V = V = 1.65V to 2.0V for Program,

DDQ

Erase and Read

– V = 12V for fast Program (optional)

■ MULTIPLEXED ADDRESS/DATA

■ SYNCHRONOUS / ASYNCHRONOUS READ

– Configurable Burst mode Read

– Page mode Read (4 Words Page)

– Random Access: 100ns

BGA

µBGA

µBGA46 (GC)

10 x 4 ball array

LFBGA54 (ZC)

10 x 4 ball array

■ PROGRAMMING TIME

– 10µs by Word typical

– Double Word Programming Option

■ MEMORY BLOCKS

– Dual Bank Memory Array: 8 Mbit - 24 Mbit

– Parameter Blocks (Top or Bottom location)

■ DUAL BANK OPERATIONS

Figure 1. Logic Diagram

– Read within one Bank while Program or

Erase within the other

DD DDQ PP

– No delay between Read and Write operations

■ BLOCK PROTECTION/UNPROTECTION

– All Blocks protected at Power-up

A16-A20

ADQ0-ADQ15

– Any combination of Blocks can be protected

■ COMMON FLASH INTERFACE (CFI)

■ 64 bit SECURITY CODE

WAIT

BINV

M59MR032C

M59MR032D

■ ERASE SUSPEND and RESUME MODES

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M59MR032C: A4h

– Bottom Device Code, M59MR032D: A5h

AI90109

April 2001

1/49

12 3 4 5 6 7...49

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