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M59MR032D100GC6T PDF预览

M59MR032D100GC6T

更新时间: 2024-09-24 22:07:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路
页数 文件大小 规格书
49页 352K
描述
32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

M59MR032D100GC6T 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:BGA包装说明:0.50 MM PITCH, MICRO, BGA-46
针数:46Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.6Is Samacsys:N
最长访问时间:14 ns启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PBGA-B46
长度:10.53 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:8,63
端子数量:46字数:2097152 words
字数代码:2000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装等效代码:BGA46,8X14,40/20
封装形状:RECTANGULAR封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
页面大小:4 words并行/串行:PARALLEL
电源:1.8 V编程电压:1.8 V
认证状态:Not Qualified座面最大高度:1 mm
部门规模:4K,32K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.05 mA
最大供电电压 (Vsup):2 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.5 mm
端子位置:BOTTOM切换位:YES
类型:NOR TYPE宽度:6.29 mm
Base Number Matches:1

M59MR032D100GC6T 数据手册

 浏览型号M59MR032D100GC6T的Datasheet PDF文件第2页浏览型号M59MR032D100GC6T的Datasheet PDF文件第3页浏览型号M59MR032D100GC6T的Datasheet PDF文件第4页浏览型号M59MR032D100GC6T的Datasheet PDF文件第5页浏览型号M59MR032D100GC6T的Datasheet PDF文件第6页浏览型号M59MR032D100GC6T的Datasheet PDF文件第7页 
M59MR032C  
M59MR032D  
32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst)  
1.8V Supply Flash Memory  
SUPPLY VOLTAGE  
– V = V = 1.65V to 2.0V for Program,  
DD  
DDQ  
Erase and Read  
– V = 12V for fast Program (optional)  
PP  
MULTIPLEXED ADDRESS/DATA  
SYNCHRONOUS / ASYNCHRONOUS READ  
– Configurable Burst mode Read  
– Page mode Read (4 Words Page)  
– Random Access: 100ns  
BGA  
µBGA  
µBGA46 (GC)  
10 x 4 ball array  
LFBGA54 (ZC)  
10 x 4 ball array  
PROGRAMMING TIME  
– 10µs by Word typical  
– Double Word Programming Option  
MEMORY BLOCKS  
– Dual Bank Memory Array: 8 Mbit - 24 Mbit  
– Parameter Blocks (Top or Bottom location)  
DUAL BANK OPERATIONS  
Figure 1. Logic Diagram  
– Read within one Bank while Program or  
Erase within the other  
V
V
V
DD DDQ PP  
– No delay between Read and Write operations  
BLOCK PROTECTION/UNPROTECTION  
– All Blocks protected at Power-up  
5
16  
A16-A20  
ADQ0-ADQ15  
– Any combination of Blocks can be protected  
COMMON FLASH INTERFACE (CFI)  
64 bit SECURITY CODE  
W
E
WAIT  
BINV  
M59MR032C  
M59MR032D  
G
ERASE SUSPEND and RESUME MODES  
RP  
WP  
L
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
K
– Top Device Code, M59MR032C: A4h  
– Bottom Device Code, M59MR032D: A5h  
V
SS  
AI90109  
April 2001  
1/49  

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